Abstract
We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE Conference on Nanotechnology |
| Pages | 608-611 |
| Number of pages | 4 |
| DOIs | |
| State | Published - Dec 1 2011 |
| Event | 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States Duration: Aug 15 2011 → Aug 19 2011 |
Other
| Other | 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 |
|---|---|
| Country | United States |
| City | Portland, OR |
| Period | 8/15/11 → 8/19/11 |
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Keywords
- nanowire
- Physical Vapor Deposition
- PVD
- Zinc Oxide
- ZnO
ASJC Scopus subject areas
- Bioengineering
- Electrical and Electronic Engineering
- Materials Chemistry
- Condensed Matter Physics
Cite this
ZnO nanowire growth by physical vapor deposition. / Tigli, Onur; Juhala, Jason.
Proceedings of the IEEE Conference on Nanotechnology. 2011. p. 608-611 6144585.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ZnO nanowire growth by physical vapor deposition
AU - Tigli, Onur
AU - Juhala, Jason
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.
AB - We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.
KW - nanowire
KW - Physical Vapor Deposition
KW - PVD
KW - Zinc Oxide
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84858955683&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84858955683&partnerID=8YFLogxK
U2 - 10.1109/NANO.2011.6144585
DO - 10.1109/NANO.2011.6144585
M3 - Conference contribution
AN - SCOPUS:84858955683
SN - 9781457715143
SP - 608
EP - 611
BT - Proceedings of the IEEE Conference on Nanotechnology
ER -