ZnO nanowire growth by physical vapor deposition

Onur Tigli, Jason Juhala

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations


We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.

Original languageEnglish (US)
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Number of pages4
StatePublished - Dec 1 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/TerritoryUnited States
CityPortland, OR


  • nanowire
  • Physical Vapor Deposition
  • PVD
  • Zinc Oxide
  • ZnO

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics


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