ZnO nanowire growth by physical vapor deposition

Onur Tigli, Jason Juhala

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.

Original languageEnglish
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
Pages608-611
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period8/15/118/19/11

Fingerprint

Zinc Oxide
Physical vapor deposition
Zinc oxide
zinc oxides
Nanowires
nanowires
vapor deposition
Silicon
Substrates
contamination
Contamination
Electron microscopes
electron microscopes
Experiments
Impurities
Scanning
catalysts
Thin films
impurities
Catalysts

Keywords

  • nanowire
  • Physical Vapor Deposition
  • PVD
  • Zinc Oxide
  • ZnO

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Tigli, O., & Juhala, J. (2011). ZnO nanowire growth by physical vapor deposition. In Proceedings of the IEEE Conference on Nanotechnology (pp. 608-611). [6144585] https://doi.org/10.1109/NANO.2011.6144585

ZnO nanowire growth by physical vapor deposition. / Tigli, Onur; Juhala, Jason.

Proceedings of the IEEE Conference on Nanotechnology. 2011. p. 608-611 6144585.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tigli, O & Juhala, J 2011, ZnO nanowire growth by physical vapor deposition. in Proceedings of the IEEE Conference on Nanotechnology., 6144585, pp. 608-611, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 8/15/11. https://doi.org/10.1109/NANO.2011.6144585
Tigli O, Juhala J. ZnO nanowire growth by physical vapor deposition. In Proceedings of the IEEE Conference on Nanotechnology. 2011. p. 608-611. 6144585 https://doi.org/10.1109/NANO.2011.6144585
Tigli, Onur ; Juhala, Jason. / ZnO nanowire growth by physical vapor deposition. Proceedings of the IEEE Conference on Nanotechnology. 2011. pp. 608-611
@inproceedings{5f56316196c444519809a356cdaae611,
title = "ZnO nanowire growth by physical vapor deposition",
abstract = "We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.",
keywords = "nanowire, Physical Vapor Deposition, PVD, Zinc Oxide, ZnO",
author = "Onur Tigli and Jason Juhala",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/NANO.2011.6144585",
language = "English",
isbn = "9781457715143",
pages = "608--611",
booktitle = "Proceedings of the IEEE Conference on Nanotechnology",

}

TY - GEN

T1 - ZnO nanowire growth by physical vapor deposition

AU - Tigli, Onur

AU - Juhala, Jason

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.

AB - We report the growth of high quality zinc oxide (ZnO) nanowires on [100] n-type silicon substrates using a physical vapor deposition (PVD) method in two sets of experiments with varying reaction temperatures (800-1200 °C) and growth durations (45 min - 60 min). The diameter of the synthesized nanowires ranged from 50-120 nm with a length of 2-7.1 m. Nanowires had smooth surfaces with relatively uniform diameters. Scanning electron microscope (SEM) studies revealed aggregates of various shapes and dimensions uniformly distributed on the Si substrates. Growth axes of the nanowires were observed to be perpendicular to the surface of the ZnO clusters. These experiments demonstrate the possibility of a simple growth method for such nanowires without the use of any catalysts, thin film deposition or special pre-growth sample treatments hence eliminating any contamination or impurities.

KW - nanowire

KW - Physical Vapor Deposition

KW - PVD

KW - Zinc Oxide

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84858955683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858955683&partnerID=8YFLogxK

U2 - 10.1109/NANO.2011.6144585

DO - 10.1109/NANO.2011.6144585

M3 - Conference contribution

SN - 9781457715143

SP - 608

EP - 611

BT - Proceedings of the IEEE Conference on Nanotechnology

ER -