Abstract
Micro-ring resonators have been traditionally fabricated using expensive III-V materials such as InP or GaAs. Device tuning is typically to utilize the electro-optic effect of the III-V materials that usually leads to complex device layer structures. As another tuning approach, thermo-optic tuning of micro-ring resonators is commonly achieved by heating up the whole chip. In general, it is more challenging to achieve highly localized heating on a common chip for independent tuning of multiple micro-ring resonators residing on the same substrate. To address these issues, we describe the development of wavelength reconfigurable photonic switching using thermally tuned micro-ring resonators fabricated on a low-cost silicon-on-insulator substrate. Independent tuning of multiple micro-ring resonators, spaced at 250 μm, is realized with highly localized micro heaters (50×50 μm2 per heater area) fabricated on the same silicon substrate. Owing to the large thermo-optic effect of silicon (Δn/ΔT=1.8×10-4 K-1), 8 mA heating current is sufficient to tune a micro-ring resonator with a 3-dB spectral line width of 0.1 nm by 2.5 nm while creating a minor peak shift of less than 0.04 nm for an adjacent resonator. The switching response time is about 1 ms. A 1×4 wavelength reconfigurable photonic switch device has been demonstrated. With a resonator diameter of approximately 10 μm (greater than 18 nm in free spectral range of each micro-ring resonator), larger port-count switch matrix with wavelength reconfiguration on a small device foot print is feasible for the development of large-scale integrated photonics.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6645 |
| DOIs | |
| State | Published - Dec 1 2007 |
| Event | Nanoengineering: Fabrication, Properties, Optics, and Devices IV - San Diego, CA, United States Duration: Aug 27 2007 → Aug 30 2007 |
Other
| Other | Nanoengineering: Fabrication, Properties, Optics, and Devices IV |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 8/27/07 → 8/30/07 |
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Keywords
- Micro-ring resonators
- Optical communications
- Photonic switching
- Silicon
- Thermo-optic tuning
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Wavelength reconfigurable photonic switching using thermally tuned micro-ring resonators fabricated on silicon substrate. / Wang, Michael Renxun; Ng, Han Yong; Li, Daqun; Wang, Xuan; Martinez, Jose; Panepucci, Roberto R.; Pathak, Kachesh.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6645 2007. 66450I.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Wavelength reconfigurable photonic switching using thermally tuned micro-ring resonators fabricated on silicon substrate
AU - Wang, Michael Renxun
AU - Ng, Han Yong
AU - Li, Daqun
AU - Wang, Xuan
AU - Martinez, Jose
AU - Panepucci, Roberto R.
AU - Pathak, Kachesh
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Micro-ring resonators have been traditionally fabricated using expensive III-V materials such as InP or GaAs. Device tuning is typically to utilize the electro-optic effect of the III-V materials that usually leads to complex device layer structures. As another tuning approach, thermo-optic tuning of micro-ring resonators is commonly achieved by heating up the whole chip. In general, it is more challenging to achieve highly localized heating on a common chip for independent tuning of multiple micro-ring resonators residing on the same substrate. To address these issues, we describe the development of wavelength reconfigurable photonic switching using thermally tuned micro-ring resonators fabricated on a low-cost silicon-on-insulator substrate. Independent tuning of multiple micro-ring resonators, spaced at 250 μm, is realized with highly localized micro heaters (50×50 μm2 per heater area) fabricated on the same silicon substrate. Owing to the large thermo-optic effect of silicon (Δn/ΔT=1.8×10-4 K-1), 8 mA heating current is sufficient to tune a micro-ring resonator with a 3-dB spectral line width of 0.1 nm by 2.5 nm while creating a minor peak shift of less than 0.04 nm for an adjacent resonator. The switching response time is about 1 ms. A 1×4 wavelength reconfigurable photonic switch device has been demonstrated. With a resonator diameter of approximately 10 μm (greater than 18 nm in free spectral range of each micro-ring resonator), larger port-count switch matrix with wavelength reconfiguration on a small device foot print is feasible for the development of large-scale integrated photonics.
AB - Micro-ring resonators have been traditionally fabricated using expensive III-V materials such as InP or GaAs. Device tuning is typically to utilize the electro-optic effect of the III-V materials that usually leads to complex device layer structures. As another tuning approach, thermo-optic tuning of micro-ring resonators is commonly achieved by heating up the whole chip. In general, it is more challenging to achieve highly localized heating on a common chip for independent tuning of multiple micro-ring resonators residing on the same substrate. To address these issues, we describe the development of wavelength reconfigurable photonic switching using thermally tuned micro-ring resonators fabricated on a low-cost silicon-on-insulator substrate. Independent tuning of multiple micro-ring resonators, spaced at 250 μm, is realized with highly localized micro heaters (50×50 μm2 per heater area) fabricated on the same silicon substrate. Owing to the large thermo-optic effect of silicon (Δn/ΔT=1.8×10-4 K-1), 8 mA heating current is sufficient to tune a micro-ring resonator with a 3-dB spectral line width of 0.1 nm by 2.5 nm while creating a minor peak shift of less than 0.04 nm for an adjacent resonator. The switching response time is about 1 ms. A 1×4 wavelength reconfigurable photonic switch device has been demonstrated. With a resonator diameter of approximately 10 μm (greater than 18 nm in free spectral range of each micro-ring resonator), larger port-count switch matrix with wavelength reconfiguration on a small device foot print is feasible for the development of large-scale integrated photonics.
KW - Micro-ring resonators
KW - Optical communications
KW - Photonic switching
KW - Silicon
KW - Thermo-optic tuning
UR - http://www.scopus.com/inward/record.url?scp=42149130224&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42149130224&partnerID=8YFLogxK
U2 - 10.1117/12.734799
DO - 10.1117/12.734799
M3 - Conference contribution
SN - 9780819467935
VL - 6645
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -