Valence-band-offset controversy in HgTe/CdTe superlattices: A possible resolution

N. F. Johnson, P. M. Hui, H. Ehrenreich

Research output: Contribution to journalArticle

102 Scopus citations

Abstract

The valence-band-offset controversy in HgTe/CdTe superlattices can be simply resolved. It is shown that, while the superlattice becomes semimetallic with increasing valence-band offset, it reverts to semiconducting behavior as the offset is increased yet further. The observed electron-cyclotron mass and the band gap can be better explained for the offset of 350 meV measured by photoemission than for the smaller offset 1/4 40 meV which coincidentally is also in fair agreement with the magneto-optical data.

Original languageEnglish (US)
Pages (from-to)1993-1995
Number of pages3
JournalPhysical Review Letters
Volume61
Issue number17
DOIs
StatePublished - Jan 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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