Valence-band-offset controversy in HgTe/CdTe superlattices: A possible resolution

Neil F Johnson, P. M. Hui, H. Ehrenreich

Research output: Contribution to journalArticle

102 Citations (Scopus)

Abstract

The valence-band-offset controversy in HgTe/CdTe superlattices can be simply resolved. It is shown that, while the superlattice becomes semimetallic with increasing valence-band offset, it reverts to semiconducting behavior as the offset is increased yet further. The observed electron-cyclotron mass and the band gap can be better explained for the offset of 350 meV measured by photoemission than for the smaller offset 1/4 40 meV which coincidentally is also in fair agreement with the magneto-optical data.

Original languageEnglish (US)
Pages (from-to)1993-1995
Number of pages3
JournalPhysical Review Letters
Volume61
Issue number17
DOIs
StatePublished - 1988
Externally publishedYes

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superlattices
valence
cyclotrons
photoelectric emission
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Valence-band-offset controversy in HgTe/CdTe superlattices : A possible resolution. / Johnson, Neil F; Hui, P. M.; Ehrenreich, H.

In: Physical Review Letters, Vol. 61, No. 17, 1988, p. 1993-1995.

Research output: Contribution to journalArticle

Johnson, Neil F ; Hui, P. M. ; Ehrenreich, H. / Valence-band-offset controversy in HgTe/CdTe superlattices : A possible resolution. In: Physical Review Letters. 1988 ; Vol. 61, No. 17. pp. 1993-1995.
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