Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Hoon Sik Kim, Eric Brueckner, Jizhou Song, Yuhang Li, Seok Kim, Chaofeng Lu, Joshua Sulkin, Kent Choquette, Yonggang Huang, Ralph G. Nuzzo, John A. Rogers

Research output: Contribution to journalArticle

149 Citations (Scopus)

Abstract

Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.

Original languageEnglish
Pages (from-to)10072-10077
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume108
Issue number25
DOIs
StatePublished - Jun 21 2011

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Silicon
Lighting
Light
Hot Temperature
Equipment and Supplies
Technology
Plastics
gallium nitride
indium nitride

Keywords

  • Gallium nitride
  • Solid-state lighting
  • Transfer printing

ASJC Scopus subject areas

  • General

Cite this

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting. / Kim, Hoon Sik; Brueckner, Eric; Song, Jizhou; Li, Yuhang; Kim, Seok; Lu, Chaofeng; Sulkin, Joshua; Choquette, Kent; Huang, Yonggang; Nuzzo, Ralph G.; Rogers, John A.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 108, No. 25, 21.06.2011, p. 10072-10077.

Research output: Contribution to journalArticle

Kim, HS, Brueckner, E, Song, J, Li, Y, Kim, S, Lu, C, Sulkin, J, Choquette, K, Huang, Y, Nuzzo, RG & Rogers, JA 2011, 'Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting', Proceedings of the National Academy of Sciences of the United States of America, vol. 108, no. 25, pp. 10072-10077. https://doi.org/10.1073/pnas.1102650108
Kim, Hoon Sik ; Brueckner, Eric ; Song, Jizhou ; Li, Yuhang ; Kim, Seok ; Lu, Chaofeng ; Sulkin, Joshua ; Choquette, Kent ; Huang, Yonggang ; Nuzzo, Ralph G. ; Rogers, John A. / Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting. In: Proceedings of the National Academy of Sciences of the United States of America. 2011 ; Vol. 108, No. 25. pp. 10072-10077.
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