Trap-clearing Spectroscopy in Perylene Diimide Derivatives

Louisa M. Smieska; Zhong Li; David Ley; Adam Braunschweig; John A. Marohn

doi:10.1021/acs.chemmater.5b04025

Trap-clearing Spectroscopy in Perylene Diimide Derivatives

Louisa M. Smieska, Zhong Li, David Ley, Adam Braunschweig, John A. Marohn

Chemistry

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

Perylene diimide (PDI) derivatives are important components of organic circuits and photovoltaic systems, but the electron trapping mechanism(s) in higher-LUMO PDIs (-3 to -4 eV, where radical anions are expected to react with atmospheric water and oxygen) are not well characterized. Here, we examine the spatial distribution of traps in transistors made from PDIs with these higher LUMO levels and measure trap-clearing spectra in n-type organic materials using time- and wavelength-resolved frequency-modulated Kelvin probe force microscopy (FM-KPFM). We find that the rate of trap-clearing under visible light does not follow a LUMO-level trend, and we observe spectral evidence for different trapping mechanisms on bare versus HMDS-treated SiO₂.

Original language	English (US)
Pages (from-to)	813-820
Number of pages	8
Journal	Chemistry of Materials
Volume	28
Issue number	3
DOIs	https://doi.org/10.1021/acs.chemmater.5b04025
State	Published - Feb 9 2016

Fingerprint

ASJC Scopus subject areas

Materials Chemistry
Chemical Engineering(all)
Chemistry(all)

Cite this

Smieska, L. M., Li, Z., Ley, D., Braunschweig, A., & Marohn, J. A. (2016). Trap-clearing Spectroscopy in Perylene Diimide Derivatives. Chemistry of Materials, 28(3), 813-820. https://doi.org/10.1021/acs.chemmater.5b04025

@article{32ed7f25b35e45a9ba1d31b70940c848,

title = "Trap-clearing Spectroscopy in Perylene Diimide Derivatives",

abstract = "Perylene diimide (PDI) derivatives are important components of organic circuits and photovoltaic systems, but the electron trapping mechanism(s) in higher-LUMO PDIs (-3 to -4 eV, where radical anions are expected to react with atmospheric water and oxygen) are not well characterized. Here, we examine the spatial distribution of traps in transistors made from PDIs with these higher LUMO levels and measure trap-clearing spectra in n-type organic materials using time- and wavelength-resolved frequency-modulated Kelvin probe force microscopy (FM-KPFM). We find that the rate of trap-clearing under visible light does not follow a LUMO-level trend, and we observe spectral evidence for different trapping mechanisms on bare versus HMDS-treated SiO2.",

author = "Smieska, {Louisa M.} and Zhong Li and David Ley and Adam Braunschweig and Marohn, {John A.}",

year = "2016",

month = feb

day = "9",

doi = "10.1021/acs.chemmater.5b04025",

language = "English (US)",

volume = "28",

pages = "813--820",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Trap-clearing Spectroscopy in Perylene Diimide Derivatives

AU - Smieska, Louisa M.

AU - Li, Zhong

AU - Ley, David

AU - Braunschweig, Adam

AU - Marohn, John A.

PY - 2016/2/9

Y1 - 2016/2/9

N2 - Perylene diimide (PDI) derivatives are important components of organic circuits and photovoltaic systems, but the electron trapping mechanism(s) in higher-LUMO PDIs (-3 to -4 eV, where radical anions are expected to react with atmospheric water and oxygen) are not well characterized. Here, we examine the spatial distribution of traps in transistors made from PDIs with these higher LUMO levels and measure trap-clearing spectra in n-type organic materials using time- and wavelength-resolved frequency-modulated Kelvin probe force microscopy (FM-KPFM). We find that the rate of trap-clearing under visible light does not follow a LUMO-level trend, and we observe spectral evidence for different trapping mechanisms on bare versus HMDS-treated SiO2.

AB - Perylene diimide (PDI) derivatives are important components of organic circuits and photovoltaic systems, but the electron trapping mechanism(s) in higher-LUMO PDIs (-3 to -4 eV, where radical anions are expected to react with atmospheric water and oxygen) are not well characterized. Here, we examine the spatial distribution of traps in transistors made from PDIs with these higher LUMO levels and measure trap-clearing spectra in n-type organic materials using time- and wavelength-resolved frequency-modulated Kelvin probe force microscopy (FM-KPFM). We find that the rate of trap-clearing under visible light does not follow a LUMO-level trend, and we observe spectral evidence for different trapping mechanisms on bare versus HMDS-treated SiO2.

UR - http://www.scopus.com/inward/record.url?scp=84957991091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957991091&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.5b04025

DO - 10.1021/acs.chemmater.5b04025

M3 - Article

AN - SCOPUS:84957991091

VL - 28

SP - 813

EP - 820

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 3

ER -

Access to Document

10.1021/acs.chemmater.5b04025