Three months follow up of changes in the rabbit cornea after photoablation with a pulsed scanning beam at 213 nm

Per G. Söderberg, Takaaki Matsui, Fabrice Manns, Jin Shen, Jean Marie Parel, Jean Marc Legeais, Michelle Savoldelli, Isabelle Drubaix, Maurice Menashe, Gilles Renard, Yves Pouliquen

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

A scanning beam of nano-second pulses at 213 nm flattens the cornea as predicted. However, there is a considerable variability in the flattening and the ablation is not safe. Ablation for 16 D flattening with an active spot overlap of 50 % induced 8.9 ±5.3 D (n = 7) as measured by the TMS topography system (ring 7 average) and 5.8 ±4.1 D (n = 5) as measured with the SK-1 (2 mm zone) system. Ablation for 6 D flattening with an active spot overlap of 70 % induced approximately 2 D flattening to 2 D steepening (n=3) as measured with the TMS (ring 7) and 6.6 ±4.33 D (n = 7) flattening as measured by SK-1 (2 mm zone) keratometry. There was no change in IOP at 12 weeks after as compared to before ablation. There was a net increase of central and peripheral corneal thickness at 12 weeks after the ablation as compared to preoperatively. Epithelial defects remained up to 4 weeks after ablation. After four weeks, vessels had invaded the cornea in 30 % of the cases and remained throughout the three months observed. It is concluded that 213 nm nano-second pulses can be used for flattening the cornea but the system should not be used for clinical trials in humans until the adverse effects can be avoided.

Original languageEnglish (US)
Pages (from-to)55-60
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2393
DOIs
StatePublished - May 22 1995
EventOphthalmic Technologies V 1995 - San Jose, United States
Duration: Feb 1 1995Feb 28 1995

Keywords

  • 213 nm
  • In vivo
  • Keratometry
  • Pachometry
  • Photoablation
  • Slit lamp
  • Tonometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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