The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 nm Size Range

Jeongmin Hong, Ali Hadjikhani, Mark Stone, Frances I. Allen, Vladimir Safonov, Ping Liang, Jeffrey Bokor, Sakhrat Khizroev

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The spin-transfer torque magnetic tunneling junction (MTJ) technology may pave a way to a universal memory paradigm. MTJ devices with perpendicular magnetic anisotropy have the potential to have high thermal stability, high tunneling magnetoresistance, and low critical current for energy-efficient current-induced magnetization switching. Using devices fabricated through focused ion beam etching with Ga-and Ne-ion beams, this paper aimed to understand the size dependence of the current/voltage characteristics in the sub-10 nm range. The switching current density drastically dropped around 1 MA/cm2 as the device size was reduced below 10 nm. A stability of over 22 kT measured for a 5 nm device indicated a significantly reduced spin relaxation time.

Original languageEnglish (US)
Article number7412729
JournalIEEE Transactions on Magnetics
Volume52
Issue number7
DOIs
StatePublished - Jul 2016

Keywords

  • Magnetic memory
  • Magnetic multilayers
  • Magnetic switching
  • Magnetoelectronics
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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