The effect of size distribution on the switching field distribution of Co/Pd multilayered nanostructure arrays

Darren Smith, James Rantschler, Paul Ruchhoeft, Sakhrat Khizroev, Dmitri Litvinov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We use Ion Bean Proximity Lithography (IBPL) to produce 4mm × 4mm arrays of 220 nm dots in perpendicularlyoriented Co/Pd multilayered media. IBPL is used to reduce the size distribution σD of the arrays, and subsequently He + ion irradiation is used to reduce their anisotropy. The Switching Field Distribution σHcr/HCr is measured for each sample before and after irradiation, and a linear relationship is experimentally found between σHCr/Hcr and σD We argue that the slope of the line is due to the self-demagnetization effect of individual dots (and therefore, it is not strictly a line) and that the intercept of the line is inversely proportional to the permeability of the nanostructured material.

Original languageEnglish (US)
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages633-634
Number of pages2
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: Aug 18 2008Aug 21 2008

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Country/TerritoryUnited States
CityArlington, TX
Period8/18/088/21/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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