TY - GEN
T1 - Synthesis of ZnO nanowires using lower temperature vapor based methods
AU - Senveli, Sukru U.
AU - Gomez, Jorge L.
AU - Tigli, Onur
PY - 2013/12/1
Y1 - 2013/12/1
N2 - In this paper, we elaborate on protocols for growing ZnO nanowires using different vapor deposition techniques to provide a comparative study for low temperature based deposition. Effects of various parameters ranging from process temperatures to material compositions were investigated. Growth from ZnO thin film seed layers and catalytic growth using Au nanoparticles were performed as well as growth on blank Si substrates for comparison. Detailed results of SEM and XRD studies are presented for the ZnO nanowires. The lowest temperature achieved was approximately 750 °C with nanowires having diameters of 30-50 nm and lengths of 200-300 nm using VS method with a ZnO thin film seed to obtain complete surface coverage. In order to make the vapor based methods compatible with biosensors with monolithic readout circuits, the conventional thermal budget of commonly employed CMOS technology (usually around 450 °C) needs to be considered. Thus, lower temperature growth is preferable. In this regard, we address the temperature aspect of the growth for CMOS compatibility. We identify the effects of important process parameters and present a comprehensive investigation and comparative study of various factors on ZnO nanowire growth.
AB - In this paper, we elaborate on protocols for growing ZnO nanowires using different vapor deposition techniques to provide a comparative study for low temperature based deposition. Effects of various parameters ranging from process temperatures to material compositions were investigated. Growth from ZnO thin film seed layers and catalytic growth using Au nanoparticles were performed as well as growth on blank Si substrates for comparison. Detailed results of SEM and XRD studies are presented for the ZnO nanowires. The lowest temperature achieved was approximately 750 °C with nanowires having diameters of 30-50 nm and lengths of 200-300 nm using VS method with a ZnO thin film seed to obtain complete surface coverage. In order to make the vapor based methods compatible with biosensors with monolithic readout circuits, the conventional thermal budget of commonly employed CMOS technology (usually around 450 °C) needs to be considered. Thus, lower temperature growth is preferable. In this regard, we address the temperature aspect of the growth for CMOS compatibility. We identify the effects of important process parameters and present a comprehensive investigation and comparative study of various factors on ZnO nanowire growth.
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U2 - 10.1109/NANO.2013.6721051
DO - 10.1109/NANO.2013.6721051
M3 - Conference contribution
AN - SCOPUS:84894192309
SN - 9781479906758
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 774
EP - 777
BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Y2 - 5 August 2013 through 8 August 2013
ER -