Superlattice excitons and optical absorption

P. M. Young; H. Ehrenreich; P. M. Hui; N. F. Johnson

doi:10.1063/1.355005

Superlattice excitons and optical absorption

P. M. Young, H. Ehrenreich, P. M. Hui, N. F. Johnson

Physics

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18 Scopus citations

Abstract

A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga_1-xAl_xAs and In_1-xGa _xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.

Original language	English (US)
Pages (from-to)	7369-7378
Number of pages	10
Journal	Journal of Applied Physics
Volume	74
Issue number	12
DOIs	https://doi.org/10.1063/1.355005
State	Published - 1993

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Physics and Astronomy(all)

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@article{5bfc2f18cc7a4f98bbf589d6d04e58c1,

title = "Superlattice excitons and optical absorption",

abstract = "A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.",

author = "Young, {P. M.} and H. Ehrenreich and Hui, {P. M.} and Johnson, {N. F.}",

year = "1993",

doi = "10.1063/1.355005",

language = "English (US)",

volume = "74",

pages = "7369--7378",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Superlattice excitons and optical absorption

AU - Young, P. M.

AU - Ehrenreich, H.

AU - Hui, P. M.

AU - Johnson, N. F.

PY - 1993

Y1 - 1993

N2 - A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.

AB - A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.

UR - http://www.scopus.com/inward/record.url?scp=0027904260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027904260&partnerID=8YFLogxK

U2 - 10.1063/1.355005

DO - 10.1063/1.355005

M3 - Article

AN - SCOPUS:0027904260

VL - 74

SP - 7369

EP - 7378

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -

Superlattice excitons and optical absorption

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