Superlattice excitons and optical absorption

P. M. Young; H. Ehrenreich; P. M. Hui; N. F. Johnson

doi:10.1063/1.355005

Superlattice excitons and optical absorption

P. M. Young, H. Ehrenreich, P. M. Hui, N. F. Johnson

Physics

Research output: Contribution to journal › Article

18 Scopus citations

Abstract

A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga_1-xAl_xAs and In_1-xGa _xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.

Original language	English (US)
Pages (from-to)	7369-7378
Number of pages	10
Journal	Journal of Applied Physics
Volume	74
Issue number	12
DOIs	https://doi.org/10.1063/1.355005
State	Published - Dec 1 1993

ASJC Scopus subject areas

Physics and Astronomy(all)

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Young, P. M., Ehrenreich, H., Hui, P. M., & Johnson, N. F. (1993). Superlattice excitons and optical absorption. Journal of Applied Physics, 74(12), 7369-7378. https://doi.org/10.1063/1.355005

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AB - A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.

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