Abstract
A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7369-7378 |
| Number of pages | 10 |
| Journal | Journal of Applied Physics |
| Volume | 74 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1993 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Superlattice excitons and optical absorption. / Young, P. M.; Ehrenreich, H.; Hui, P. M.; Johnson, Neil F.
In: Journal of Applied Physics, Vol. 74, No. 12, 1993, p. 7369-7378.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Superlattice excitons and optical absorption
AU - Young, P. M.
AU - Ehrenreich, H.
AU - Hui, P. M.
AU - Johnson, Neil F
PY - 1993
Y1 - 1993
N2 - A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.
AB - A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1-xAlxAs and In1-xGa xAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.
UR - http://www.scopus.com/inward/record.url?scp=0027904260&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027904260&partnerID=8YFLogxK
U2 - 10.1063/1.355005
DO - 10.1063/1.355005
M3 - Article
AN - SCOPUS:0027904260
VL - 74
SP - 7369
EP - 7378
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -