Sub-10-nm-resolution electron-beam lithography toward very-high-density multilevel 3D nano-magnetic information devices

Beomseop Lee, Jeongmin Hong, Nissim Amos, Ilya Dumer, Dmitri Litvinov, Sakhrat Khizroev

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We report a study on the optimization of ultra-high-resolution electron-beam lithography for nanoscale patterning with two separate lift-off processes using positive and negative resists; the optimized method is suitable for the emerging area of nano-magnetoelectronics. If used together, these high-aspect-ratio processes can achieve information cells with a diameter of 9 nm, a square pitch of 26 nm, and an etch depth of at least 50 nm, as required for recording densities greater than 3 Tbit/in2, provided that 3D integration includes between 2 and 8 independent magnetic bits. Such effective patterning can be used to further develop magnetic bits packed for ultra-high-density disk recording and the emerging field of magnetic tunneling junctions for logic and memory applications.

Original languageEnglish (US)
Article number1665
JournalJournal of Nanoparticle Research
Issue number6
StatePublished - Jun 2013


  • Bit-patterned-media
  • Electron-beam lithography
  • Magnetoelectronic devices
  • Optimal lithography

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics


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