Strain-controlled band engineering and self-doping in ultrathin LaNiO 3 films

E. J. Moon, J. M. Rondinelli, N. Prasai, B. A. Gray, M. Kareev, J. Chakhalian, Joshua Cohn

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultrathin metallic LaNiO 3 films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the evolution of the transport coefficients is strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in transport properties arise from changes in the low-energy electronic band structure that induce self-doping, a transfer of charge between O p and Ni d states. The results suggest that thin-film epitaxy can serve as a means to vary the charge-carrier concentration in other (negative) charge-transfer gap transition-metal oxides without resorting to chemical substitution.

Original languageEnglish (US)
Article number121106
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number12
DOIs
StatePublished - Mar 30 2012

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Doping (additives)
engineering
transport properties
Thermoelectric power
Charge carriers
Epitaxial growth
Stoichiometry
Band structure
Transport properties
epitaxy
Oxides
cuprates
Transition metals
Density functional theory
Carrier concentration
metal oxides
Hall effect
Charge transfer
charge carriers
stoichiometry

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Strain-controlled band engineering and self-doping in ultrathin LaNiO 3 films. / Moon, E. J.; Rondinelli, J. M.; Prasai, N.; Gray, B. A.; Kareev, M.; Chakhalian, J.; Cohn, Joshua.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 85, No. 12, 121106, 30.03.2012.

Research output: Contribution to journalArticle

Moon, E. J. ; Rondinelli, J. M. ; Prasai, N. ; Gray, B. A. ; Kareev, M. ; Chakhalian, J. ; Cohn, Joshua. / Strain-controlled band engineering and self-doping in ultrathin LaNiO 3 films. In: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Vol. 85, No. 12.
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