Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Huide Wang, Shan Gao, Feng Zhang, Fanxu Meng, Zhinan Guo, Rui Cao, Yonghong Zeng, Jinlai Zhao, Si Chen, Haiguo Hu, Yu Jia Zeng, Sung Jin Kim, Dianyuan Fan, Han Zhang, Paras N. Prasad

Research output: Contribution to journalArticlepeer-review

Abstract

Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first-time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe-based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high-performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.

Original languageEnglish (US)
Article number2100503
JournalAdvanced Science
Volume8
Issue number15
DOIs
StatePublished - Aug 4 2021
Externally publishedYes

Keywords

  • black phosphorus
  • graphene
  • interlayer recombination
  • sensitive photodetectors
  • vdW heterostructures

ASJC Scopus subject areas

  • Medicine (miscellaneous)
  • Chemical Engineering(all)
  • Materials Science(all)
  • Biochemistry, Genetics and Molecular Biology (miscellaneous)
  • Engineering(all)
  • Physics and Astronomy(all)

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