Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB

Wei Gang Wang, Stephen Hageman, Mingen Li, Sunxiang Huang, Xiaoming Kou, Xin Fan, John Q. Xiao, C. L. Chien

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed.

Original languageEnglish (US)
Article number102502
JournalApplied Physics Letters
Volume99
Issue number10
DOIs
StatePublished - Sep 5 2011
Externally publishedYes

Fingerprint

tunnel junctions
anisotropy
annealing
degradation
impurities
decay
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB. / Wang, Wei Gang; Hageman, Stephen; Li, Mingen; Huang, Sunxiang; Kou, Xiaoming; Fan, Xin; Xiao, John Q.; Chien, C. L.

In: Applied Physics Letters, Vol. 99, No. 10, 102502, 05.09.2011.

Research output: Contribution to journalArticle

Wang, Wei Gang ; Hageman, Stephen ; Li, Mingen ; Huang, Sunxiang ; Kou, Xiaoming ; Fan, Xin ; Xiao, John Q. ; Chien, C. L. / Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB. In: Applied Physics Letters. 2011 ; Vol. 99, No. 10.
@article{dd4da2efb449429baf5b72fd131436ae,
title = "Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB",
abstract = "The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed.",
author = "Wang, {Wei Gang} and Stephen Hageman and Mingen Li and Sunxiang Huang and Xiaoming Kou and Xin Fan and Xiao, {John Q.} and Chien, {C. L.}",
year = "2011",
month = "9",
day = "5",
doi = "10.1063/1.3634026",
language = "English (US)",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB

AU - Wang, Wei Gang

AU - Hageman, Stephen

AU - Li, Mingen

AU - Huang, Sunxiang

AU - Kou, Xiaoming

AU - Fan, Xin

AU - Xiao, John Q.

AU - Chien, C. L.

PY - 2011/9/5

Y1 - 2011/9/5

N2 - The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed.

AB - The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed.

UR - http://www.scopus.com/inward/record.url?scp=80052809162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052809162&partnerID=8YFLogxK

U2 - 10.1063/1.3634026

DO - 10.1063/1.3634026

M3 - Article

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102502

ER -