Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB

Wei Gang Wang, Stephen Hageman, Mingen Li, Sunxiang Huang, Xiaoming Kou, Xin Fan, John Q. Xiao, C. L. Chien

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed.

Original languageEnglish (US)
Article number102502
JournalApplied Physics Letters
Volume99
Issue number10
DOIs
StatePublished - Sep 5 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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