Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification

Hossein Shokri Kojori, Ju Hyung Yun, Younghun Paik, Joondong Kim, Wayne A. Anderson, Sung Jin Kim

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.

Original languageEnglish (US)
Pages (from-to)250-254
Number of pages5
JournalNano Letters
Volume16
Issue number1
DOIs
StatePublished - Jan 13 2016

Fingerprint

Hot electrons
Field effect transistors
hot electrons
Amplification
Nanostructures
field effect transistors
Metals
Semiconductor junctions
metals
semiconductor junctions
Drain current
Thin film transistors
versatility
Optoelectronic devices
transistors
selectivity
Electric fields
Wavelength
electric fields
energy

Keywords

  • localized surface plasmon resonance
  • nanophotonics
  • plasmon energy detection
  • plasmon field effect transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification. / Shokri Kojori, Hossein; Yun, Ju Hyung; Paik, Younghun; Kim, Joondong; Anderson, Wayne A.; Kim, Sung Jin.

In: Nano Letters, Vol. 16, No. 1, 13.01.2016, p. 250-254.

Research output: Contribution to journalArticle

Shokri Kojori, Hossein ; Yun, Ju Hyung ; Paik, Younghun ; Kim, Joondong ; Anderson, Wayne A. ; Kim, Sung Jin. / Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification. In: Nano Letters. 2016 ; Vol. 16, No. 1. pp. 250-254.
@article{a40ca0b4828b4591acca65bb860ec33c,
title = "Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification",
abstract = "Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.",
keywords = "localized surface plasmon resonance, nanophotonics, plasmon energy detection, plasmon field effect transistor",
author = "{Shokri Kojori}, Hossein and Yun, {Ju Hyung} and Younghun Paik and Joondong Kim and Anderson, {Wayne A.} and Kim, {Sung Jin}",
year = "2016",
month = "1",
day = "13",
doi = "10.1021/acs.nanolett.5b03625",
language = "English (US)",
volume = "16",
pages = "250--254",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

TY - JOUR

T1 - Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification

AU - Shokri Kojori, Hossein

AU - Yun, Ju Hyung

AU - Paik, Younghun

AU - Kim, Joondong

AU - Anderson, Wayne A.

AU - Kim, Sung Jin

PY - 2016/1/13

Y1 - 2016/1/13

N2 - Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.

AB - Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.

KW - localized surface plasmon resonance

KW - nanophotonics

KW - plasmon energy detection

KW - plasmon field effect transistor

UR - http://www.scopus.com/inward/record.url?scp=84957565904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957565904&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b03625

DO - 10.1021/acs.nanolett.5b03625

M3 - Article

AN - SCOPUS:84957565904

VL - 16

SP - 250

EP - 254

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -