Abstract
The conduction edge mass in GaN was set to m0*0.208±0.002me via CR experiments. Using the determination of the NP and reviewing the polaron correction, much better agreement between several published data for m0* was obtained.
Original language | English (US) |
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Pages (from-to) | 4553-4555 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 22 |
DOIs | |
State | Published - Dec 1 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)