Nanomagnetic Particle-Based Information Processing

Brayan Navarrete, Mark Stone, Ping Wang, Rakesh Guduru, Kevin Luongo, Ali Hadjikhani, Dennis Toledo, Yusuf Emirov, Bassim Arkook, Ping Liang, Jeonming Hong, Jeffrey Bokor, Sakhrat Khizroev

Research output: Contribution to journalArticlepeer-review


Understanding the physics of spintronic devices in the 3-nm size range can pave the way to next-generation energy-efficient information processing devices. To build a spin computer, a layer of 3-nm CoFe-{2} O-{4} nanoparticles was sandwiched as a central layer into the standard spin-Transfer torque magnetic tunneling junction (STT-MTJ) stack. With further focused ion beam (FIB) trimming, a dual-layer junction consisting of one or more nanoparticles separating two CoFeB ferromagnetic layers was turned into a two-Terminal spintronic device. The measured room-Temperature electron transport through the device showed a staircase effect reminiscent of a single electron transport, which in addition depended on the relative orientations of the magnetic states of the ferromagnetic layers and the high-Anisotropy ferrimagnetic nanoparticle. Besides having the staircase steps, the V-I curve indicated switching of the nanoparticles magnetization through the STT effect at currents of above 0.05 uA. The magnetoresistance (MR) curve of this device with the magnetic field applied perpendicular to the junction had an anomalous oscillatory field dependence in a relatively low field range of below 100 Oe.

Original languageEnglish (US)
Article number8830442
Pages (from-to)983-988
Number of pages6
JournalIEEE Transactions on Nanotechnology
StatePublished - 2019


  • Coulomb Blockade
  • Magnetic Nanoparticle
  • Magnetic Tunnel Junctions
  • Spin Transfer Torque
  • Spintronics

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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