Multiple exciton generation and electrical extraction from a PbSe quantum dot photoconductor

Sung Jin Kim; Won Jin Kim; Yudhisthira Sahoo; Alexander N. Cartwright; Paras N. Prasad

doi:10.1063/1.2835920

Multiple exciton generation and electrical extraction from a PbSe quantum dot photoconductor

Sung Jin Kim, Won Jin Kim, Yudhisthira Sahoo, Alexander N. Cartwright, Paras N. Prasad

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Multiple exciton generation and subsequent electrical extraction from a thin film photoconductive device constructed from PbSe nanocrystal quantum dots are demonstrated. The hydrazine treatment of the PbSe film drastically improves the conductivity of the film while maintaining excellent optical and structural film quality. The effects of multiple exciton generation and electrical extraction (electrons collected per photon absorbed) were quantified as a function of incident photon energy from 1.55 to 3.1 eV. The multiple carrier extraction (>100%) was observed at photon energies greater than 2.8 times of the quantum dot bandgap with ∼210% measured at 4.4 times the bandgap.

Original language	English (US)
Article number	031107
Journal	Applied Physics Letters
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.2835920
State	Published - Feb 1 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Multiple exciton generation and subsequent electrical extraction from a thin film photoconductive device constructed from PbSe nanocrystal quantum dots are demonstrated. The hydrazine treatment of the PbSe film drastically improves the conductivity of the film while maintaining excellent optical and structural film quality. The effects of multiple exciton generation and electrical extraction (electrons collected per photon absorbed) were quantified as a function of incident photon energy from 1.55 to 3.1 eV. The multiple carrier extraction (>100%) was observed at photon energies greater than 2.8 times of the quantum dot bandgap with ∼210% measured at 4.4 times the bandgap.",

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AU - Prasad, Paras N.

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