Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures

L. K. Li, B. Turk, W. I. Wang, Sheyum Syed, D. Simonian, H. L. Stormer, D. V. Lang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High quality AlGaN/GaN heterostructures were grown on sapphire substrates by molecular beam epitaxy with NH3 as gas source. Significant improvement in quality was realized by inserting a low-temperature-grown AlN interlayer during the growth of the thick GaN buffer. Electron mobilities of 1500, 10310, and 12,000 cm2/V s at room temperature, 77 and 0.3 K, respective were demonstrated, and were confirmed to be of 2 degree of freedom by strong and well resolved Shubnikov-de Haas oscillations. As evidenced by photoluminescence measurements and atomic force microscopy, native point defect densities and grain boundaries were effectively reduced in the AlGaN/GaN heterostructures with AlN interlayers.

Original languageEnglish (US)
Pages (from-to)1472-1475
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 2000
Externally publishedYes

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Molecular beams
Electron mobility
electron mobility
Epitaxial growth
molecular beams
Heterojunctions
interlayers
Defect density
Point defects
Molecular beam epitaxy
Sapphire
point defects
Atomic force microscopy
Photoluminescence
Grain boundaries
sapphire
molecular beam epitaxy
grain boundaries
buffers
degrees of freedom

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures. / Li, L. K.; Turk, B.; Wang, W. I.; Syed, Sheyum; Simonian, D.; Stormer, H. L.; Lang, D. V.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1472-1475.

Research output: Contribution to journalArticle

Li, L. K. ; Turk, B. ; Wang, W. I. ; Syed, Sheyum ; Simonian, D. ; Stormer, H. L. ; Lang, D. V. / Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 3. pp. 1472-1475.
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