Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures

L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer, D. V. Lang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

High quality AlGaN/GaN heterostructures were grown on sapphire substrates by molecular beam epitaxy with NH3 as gas source. Significant improvement in quality was realized by inserting a low-temperature-grown AlN interlayer during the growth of the thick GaN buffer. Electron mobilities of 1500, 10310, and 12,000 cm2/V s at room temperature, 77 and 0.3 K, respective were demonstrated, and were confirmed to be of 2 degree of freedom by strong and well resolved Shubnikov-de Haas oscillations. As evidenced by photoluminescence measurements and atomic force microscopy, native point defect densities and grain boundaries were effectively reduced in the AlGaN/GaN heterostructures with AlN interlayers.

Original languageEnglish (US)
Pages (from-to)1472-1475
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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