TY - GEN
T1 - Modeling and simulation of zinc oxide nanowire field effect transistor biosensor
AU - Gomez, Jorge L.
AU - Tigli, Onur
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We are presenting a three-dimensional mathematical model and simulation for zinc-oxide nanowire field effect transistor (ZnO NW-FET) biosensor for detecting streptavidin/biotin binding. Implementing previously performed physical vapor deposition (PVD) techniques, ZnO NWs were synthesized with diameters in the range of 50-120 nm and lengths of 2-7.1 μm [5]. Our model is developed by using these dimensions and incorporating a spherical molecule model with uniform charge distribution that is immersed in a solvent with mobile univalent ions as developed in [1]. Applying Poisson-Boltzmann equation for boundary and continuity conditions, expression for the electrostatic potential distribution is obtained. This distribution is used to obtain the gate voltage and develop the I-V curves for ZnO NW-FET when used as a biosensor. In the saturation region, the I-V curves demonstrate that small changes in the gate voltage leads to exponentially larger changes in the drain current and allows for single biomolecule detection.
AB - We are presenting a three-dimensional mathematical model and simulation for zinc-oxide nanowire field effect transistor (ZnO NW-FET) biosensor for detecting streptavidin/biotin binding. Implementing previously performed physical vapor deposition (PVD) techniques, ZnO NWs were synthesized with diameters in the range of 50-120 nm and lengths of 2-7.1 μm [5]. Our model is developed by using these dimensions and incorporating a spherical molecule model with uniform charge distribution that is immersed in a solvent with mobile univalent ions as developed in [1]. Applying Poisson-Boltzmann equation for boundary and continuity conditions, expression for the electrostatic potential distribution is obtained. This distribution is used to obtain the gate voltage and develop the I-V curves for ZnO NW-FET when used as a biosensor. In the saturation region, the I-V curves demonstrate that small changes in the gate voltage leads to exponentially larger changes in the drain current and allows for single biomolecule detection.
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U2 - 10.1109/NMDC.2011.6155389
DO - 10.1109/NMDC.2011.6155389
M3 - Conference contribution
AN - SCOPUS:84860440686
SN - 9781457721397
T3 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
SP - 412
EP - 415
BT - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
T2 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Y2 - 18 October 2011 through 21 October 2011
ER -