Many-body effects in resonant tunneling through quantum dots

Neil F Johnson, M. C. Payne

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We show that the resonance energies associated with tunneling through a typical semiconductor dot depend strongly on quantum-mechanical many-body effects in the dot. These resonance energies IcannotP be written as the sum of single-particle confinement energies and constant Coulomb charging energies, and the magnetic-field dependence of these resonance energies differs greatly from the single-electron result. The semiclassical description of Coulomb charging effects in terms of capacitances is shown to be incorrect.

Original languageEnglish (US)
Pages (from-to)3819-3821
Number of pages3
JournalPhysical Review B
Volume45
Issue number7
DOIs
StatePublished - 1992
Externally publishedYes

Fingerprint

Resonant tunneling
resonant tunneling
Semiconductor quantum dots
quantum dots
charging
energy
Capacitance
Semiconductor materials
Magnetic fields
Electrons
capacitance
magnetic fields
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Many-body effects in resonant tunneling through quantum dots. / Johnson, Neil F; Payne, M. C.

In: Physical Review B, Vol. 45, No. 7, 1992, p. 3819-3821.

Research output: Contribution to journalArticle

Johnson, Neil F ; Payne, M. C. / Many-body effects in resonant tunneling through quantum dots. In: Physical Review B. 1992 ; Vol. 45, No. 7. pp. 3819-3821.
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