Magnetoresistive nanojunctions fabricated via focused ion beam implantation

E. Stefanescu, J. Hong, R. Guduru, A. Lavrenov, D. Litvinov, S. Khizroev

Research output: Contribution to journalArticlepeer-review

Abstract

Focused ion beam (FIB) is used to implant Ga+ ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 μm to ∼80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of ∼103 ions/cm2 at a 1-pA FIB current is sufficient to fully "de-activate" magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.

Original languageEnglish (US)
Article number1387
JournalJournal of Nanoparticle Research
Volume15
Issue number1
DOIs
StatePublished - Jan 2013

Keywords

  • Focused ion beam (FIB)
  • Giant magnetoresistive heads
  • GMR
  • Ion implantation
  • Magnetoresistive heads
  • MR
  • Nanofabrication
  • Nanomagnetic transducers
  • Nanoscale devices

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

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