Low-temperature permittivity of insulating perovskite manganites

J. L. Cohn; M. Peterca; J. J. Neumeier

doi:10.1103/PhysRevB.70.214433

Low-temperature permittivity of insulating perovskite manganites

J. L. Cohn, M. Peterca, J. J. Neumeier

Physics

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Measurements of the low-frequency (f≤100 kHz) permittivity (ε) and conductivity (σ) at T≲150 K are reported for La_1-xCa _xMnO₃ (0≤x≤1) and Ca_1-ySr _yMnO₃ (0≤y≤0.75) having antiferromagnetic, insulating ground states covering a broad range of Mn valencies from Mn ³⁺ to Mn⁴⁺. Static dielectric constants are determined from the low-T limiting behavior. With increasing T, relaxation peaks associated with charge-carrier hopping are observed in the real part of the permittivities and analyzed to determine dopant binding energies. The data are consistent with a simple model of hydrogenic impurity levels and imply effective masses m*/m_e∼3 for the Mn⁴⁺ compounds. Particularly interesting is a large dielectric constant (ε₀∼100) associated with the C-type antiferromagnetic state near the composition La _0.2Ca_0.8MnO₃.

Original language	English (US)
Article number	214433
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevB.70.214433
State	Published - Dec 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Low-temperature permittivity of insulating perovskite manganites",

abstract = "Measurements of the low-frequency (f≤100 kHz) permittivity (ε) and conductivity (σ) at T≲150 K are reported for La1-xCa xMnO3 (0≤x≤1) and Ca1-ySr yMnO3 (0≤y≤0.75) having antiferromagnetic, insulating ground states covering a broad range of Mn valencies from Mn 3+ to Mn4+. Static dielectric constants are determined from the low-T limiting behavior. With increasing T, relaxation peaks associated with charge-carrier hopping are observed in the real part of the permittivities and analyzed to determine dopant binding energies. The data are consistent with a simple model of hydrogenic impurity levels and imply effective masses m*/me∼3 for the Mn4+ compounds. Particularly interesting is a large dielectric constant (ε0∼100) associated with the C-type antiferromagnetic state near the composition La 0.2Ca0.8MnO3.",

author = "Cohn, {J. L.} and M. Peterca and Neumeier, {J. J.}",

note = "Funding Information: The work at the University of Miami was supported by NSF Grant No. DMR-0072276 and at Montana State University by NSF Grant No. DMR-0301166.",

year = "2004",

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doi = "10.1103/PhysRevB.70.214433",

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T1 - Low-temperature permittivity of insulating perovskite manganites

AU - Cohn, J. L.

AU - Peterca, M.

AU - Neumeier, J. J.

N1 - Funding Information: The work at the University of Miami was supported by NSF Grant No. DMR-0072276 and at Montana State University by NSF Grant No. DMR-0301166.

PY - 2004/12

Y1 - 2004/12

N2 - Measurements of the low-frequency (f≤100 kHz) permittivity (ε) and conductivity (σ) at T≲150 K are reported for La1-xCa xMnO3 (0≤x≤1) and Ca1-ySr yMnO3 (0≤y≤0.75) having antiferromagnetic, insulating ground states covering a broad range of Mn valencies from Mn 3+ to Mn4+. Static dielectric constants are determined from the low-T limiting behavior. With increasing T, relaxation peaks associated with charge-carrier hopping are observed in the real part of the permittivities and analyzed to determine dopant binding energies. The data are consistent with a simple model of hydrogenic impurity levels and imply effective masses m*/me∼3 for the Mn4+ compounds. Particularly interesting is a large dielectric constant (ε0∼100) associated with the C-type antiferromagnetic state near the composition La 0.2Ca0.8MnO3.

AB - Measurements of the low-frequency (f≤100 kHz) permittivity (ε) and conductivity (σ) at T≲150 K are reported for La1-xCa xMnO3 (0≤x≤1) and Ca1-ySr yMnO3 (0≤y≤0.75) having antiferromagnetic, insulating ground states covering a broad range of Mn valencies from Mn 3+ to Mn4+. Static dielectric constants are determined from the low-T limiting behavior. With increasing T, relaxation peaks associated with charge-carrier hopping are observed in the real part of the permittivities and analyzed to determine dopant binding energies. The data are consistent with a simple model of hydrogenic impurity levels and imply effective masses m*/me∼3 for the Mn4+ compounds. Particularly interesting is a large dielectric constant (ε0∼100) associated with the C-type antiferromagnetic state near the composition La 0.2Ca0.8MnO3.

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