TY - JOUR
T1 - Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth
AU - Cohn, J. L.
AU - Ben-Jacob, E.
AU - Uher, C.
N1 - Funding Information:
The authors have benefitted from fruitful discussions with M. Amman and Y. Gefen, and gratefully acknowledge the comments of F. Guinea, K. Mullen, B. Orr, U. Sivan, and Y. Shapir. This work was supported, in part, by National Science Foundation, Low Temperature Physics Grant No. DMR8508392, NSF Grant No. DMR-8608305 and Grant DAAL 03-87-k-0007.
PY - 1990/8/6
Y1 - 1990/8/6
N2 - We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.
AB - We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.
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U2 - 10.1016/0375-9601(90)90587-E
DO - 10.1016/0375-9601(90)90587-E
M3 - Article
AN - SCOPUS:44949290243
VL - 148
SP - 110
EP - 114
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 1-2
ER -