Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth

J. L. Cohn, E. Ben-Jacob, C. Uher

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.

Original languageEnglish (US)
Pages (from-to)110-114
Number of pages5
JournalPhysics Letters A
Volume148
Issue number1-2
DOIs
StatePublished - Aug 6 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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