Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth

Joshua Cohn, E. Ben-Jacob, C. Uher

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We present low-temperature (0.2 <T <10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.

Original languageEnglish (US)
Pages (from-to)110-114
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume148
Issue number1-2
DOIs
StatePublished - Aug 6 1990
Externally publishedYes

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bismuth
electron tunneling
electronics
charging
crossovers
divergence
oxides
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth. / Cohn, Joshua; Ben-Jacob, E.; Uher, C.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 148, No. 1-2, 06.08.1990, p. 110-114.

Research output: Contribution to journalArticle

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