Abstract
We present low-temperature (0.2 <T <10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 110-114 |
| Number of pages | 5 |
| Journal | Physics Letters, Section A: General, Atomic and Solid State Physics |
| Volume | 148 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Aug 6 1990 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth. / Cohn, Joshua; Ben-Jacob, E.; Uher, C.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 148, No. 1-2, 06.08.1990, p. 110-114.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth
AU - Cohn, Joshua
AU - Ben-Jacob, E.
AU - Uher, C.
PY - 1990/8/6
Y1 - 1990/8/6
N2 - We present low-temperature (0.2 <T <10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.
AB - We present low-temperature (0.2 <T <10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.
UR - http://www.scopus.com/inward/record.url?scp=44949290243&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44949290243&partnerID=8YFLogxK
U2 - 10.1016/0375-9601(90)90587-E
DO - 10.1016/0375-9601(90)90587-E
M3 - Article
AN - SCOPUS:44949290243
VL - 148
SP - 110
EP - 114
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 1-2
ER -