Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth

J. L. Cohn; E. Ben-Jacob; C. Uher

doi:10.1016/0375-9601(90)90587-E

Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth

J. L. Cohn, E. Ben-Jacob, C. Uher

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe².

Original language	English (US)
Pages (from-to)	110-114
Number of pages	5
Journal	Physics Letters A
Volume	148
Issue number	1-2
DOIs	https://doi.org/10.1016/0375-9601(90)90587-E
State	Published - Aug 6 1990

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth",

abstract = "We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near {\l}e2.",

author = "Cohn, {J. L.} and E. Ben-Jacob and C. Uher",

note = "Funding Information: The authors have benefitted from fruitful discussions with M. Amman and Y. Gefen, and gratefully acknowledge the comments of F. Guinea, K. Mullen, B. Orr, U. Sivan, and Y. Shapir. This work was supported, in part, by National Science Foundation, Low Temperature Physics Grant No. DMR8508392, NSF Grant No. DMR-8608305 and Grant DAAL 03-87-k-0007.",

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T1 - Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth

AU - Cohn, J. L.

AU - Ben-Jacob, E.

AU - Uher, C.

N1 - Funding Information: The authors have benefitted from fruitful discussions with M. Amman and Y. Gefen, and gratefully acknowledge the comments of F. Guinea, K. Mullen, B. Orr, U. Sivan, and Y. Shapir. This work was supported, in part, by National Science Foundation, Low Temperature Physics Grant No. DMR8508392, NSF Grant No. DMR-8608305 and Grant DAAL 03-87-k-0007.

PY - 1990/8/6

Y1 - 1990/8/6

N2 - We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.

AB - We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.

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