Abstract
We present low-temperature (0.2 < T < 10 K) transport measurements on semicontinuous films of bismuth which form a network of coupled Bi grains. By sequentially oxidizing such films we have observed a change in the character of transport that may be associated with the emergence of a finite charging energy and Coulomb blockade for single-electron tunneling between grains. This transition is manifested most dramatically as a divergence of the thermoelectric power with decreasing temperature. Magnetoresistance measurements indicate that the crossover in the thermopower occurs abruptly when the average oxide barrier resistance exceeds a fundamental value near łe2.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 110-114 |
| Number of pages | 5 |
| Journal | Physics Letters A |
| Volume | 148 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Aug 6 1990 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cohn, J. L., Ben-Jacob, E., & Uher, C. (1990). Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth. Physics Letters A, 148(1-2), 110-114. https://doi.org/10.1016/0375-9601(90)90587-E