Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu; Paul R. Berger; James N. Wilson; Uwe H.F. Bunz

doi:10.1557/proc-814-i13.7

Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu, Paul R. Berger, James N. Wilson, Uwe H.F. Bunz

Research output: Contribution to journal › Conference article › peer-review

Abstract

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of V_DS demonstrates that I_DS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of V_DS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

Original language	English (US)
Pages (from-to)	391-395
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	814
DOIs	https://doi.org/10.1557/proc-814-i13.7
State	Published - Jan 1 2004
Externally published	Yes
Event	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Light sensitive polymer thin film transistors based on BAS-PPE",

abstract = "The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.",

author = "Yifan Xu and Berger, {Paul R.} and Wilson, {James N.} and Bunz, {Uwe H.F.}",

year = "2004",

month = jan,

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doi = "10.1557/proc-814-i13.7",

language = "English (US)",

volume = "814",

pages = "391--395",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Flexible Electronics 2004 - Materials and Device Technology ; Conference date: 13-04-2004 Through 16-04-2004",

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T1 - Light sensitive polymer thin film transistors based on BAS-PPE

AU - Xu, Yifan

AU - Berger, Paul R.

AU - Wilson, James N.

AU - Bunz, Uwe H.F.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

AB - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

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VL - 814

SP - 391

EP - 395

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Flexible Electronics 2004 - Materials and Device Technology

Y2 - 13 April 2004 through 16 April 2004

ER -

Light sensitive polymer thin film transistors based on BAS-PPE

Abstract

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