Abstract
The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of V DS demonstrates that I DS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of V DS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 391-395 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 814 |
| State | Published - Dec 1 2004 |
| Externally published | Yes |
| Event | Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering