Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu, Paul R. Berger, James N. Wilson, Uwe H.F. Bunz

Research output: Contribution to journalConference articlepeer-review

Abstract

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

Original languageEnglish (US)
Pages (from-to)391-395
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume814
DOIs
StatePublished - Jan 1 2004
Externally publishedYes
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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