Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate

J. U. Bae; T. Y. Lin; Y. Yoon; Sung Jin Kim; A. Imre; W. Porod; J. L. Reno; J. P. Bird

doi:10.1063/1.2951901

Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate

J. U. Bae, T. Y. Lin, Y. Yoon, Sung Jin Kim, A. Imre, W. Porod, J. L. Reno, J. P. Bird

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

We demonstrate large, and hysteretic, tunneling magnetoresistance (MR) in field-effect transistors (FETs), when their usual nonmagnetic gate is replaced with a nanoscale ferromagnet. Our analysis indicates that the enhanced MR in the tunneling regime results from the ability of the fringing magnetic fields, which emanate from the nanomagnet into the FET channel, to provide an additional modulation of the electrostatic barrier induced by the applied gate voltage. The ability of this device to detect changes in magnetization may eventually allow the implementation of reprogrammable devices for universal logic and memory applications.

Original language	English
Article number	253101
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2951901
State	Published - Jul 4 2008
Externally published	Yes

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field effect transistors

logic

electrostatics

modulation

magnetization

electric potential

magnetic fields

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Bae, J. U., Lin, T. Y., Yoon, Y., Kim, S. J., Imre, A., Porod, W., ... Bird, J. P. (2008). Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate. Applied Physics Letters, 92(25), [253101]. https://doi.org/10.1063/1.2951901

Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate. / Bae, J. U.; Lin, T. Y.; Yoon, Y.; Kim, Sung Jin; Imre, A.; Porod, W.; Reno, J. L.; Bird, J. P.

In: Applied Physics Letters, Vol. 92, No. 25, 253101, 04.07.2008.

Research output: Contribution to journal › Article

Bae, JU, Lin, TY, Yoon, Y, Kim, SJ, Imre, A, Porod, W, Reno, JL & Bird, JP 2008, 'Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate', Applied Physics Letters, vol. 92, no. 25, 253101. https://doi.org/10.1063/1.2951901

Bae JU, Lin TY, Yoon Y, Kim SJ, Imre A, Porod W et al. Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate. Applied Physics Letters. 2008 Jul 4;92(25). 253101. https://doi.org/10.1063/1.2951901

Bae, J. U. ; Lin, T. Y. ; Yoon, Y. ; Kim, Sung Jin ; Imre, A. ; Porod, W. ; Reno, J. L. ; Bird, J. P. / Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate. In: Applied Physics Letters. 2008 ; Vol. 92, No. 25.

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10.1063/1.2951901