Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate

J. U. Bae; T. Y. Lin; Y. Yoon; S. J. Kim; A. Imre; W. Porod; J. L. Reno; J. P. Bird

doi:10.1063/1.2951901

Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate

J. U. Bae, T. Y. Lin, Y. Yoon, S. J. Kim, A. Imre, W. Porod, J. L. Reno, J. P. Bird

Research output: Contribution to journal › Article

15 Scopus citations

Abstract

We demonstrate large, and hysteretic, tunneling magnetoresistance (MR) in field-effect transistors (FETs), when their usual nonmagnetic gate is replaced with a nanoscale ferromagnet. Our analysis indicates that the enhanced MR in the tunneling regime results from the ability of the fringing magnetic fields, which emanate from the nanomagnet into the FET channel, to provide an additional modulation of the electrostatic barrier induced by the applied gate voltage. The ability of this device to detect changes in magnetization may eventually allow the implementation of reprogrammable devices for universal logic and memory applications.

Original language	English (US)
Article number	253101
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2951901
State	Published - Jul 4 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2951901

Fingerprint Dive into the research topics of 'Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate'. Together they form a unique fingerprint.

Cite this

Bae, J. U., Lin, T. Y., Yoon, Y., Kim, S. J., Imre, A., Porod, W., Reno, J. L., & Bird, J. P. (2008). Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate. Applied Physics Letters, 92(25), [253101]. https://doi.org/10.1063/1.2951901

@article{1954a151597b48efaca5a7f00130aecc,

title = "Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate",

abstract = "We demonstrate large, and hysteretic, tunneling magnetoresistance (MR) in field-effect transistors (FETs), when their usual nonmagnetic gate is replaced with a nanoscale ferromagnet. Our analysis indicates that the enhanced MR in the tunneling regime results from the ability of the fringing magnetic fields, which emanate from the nanomagnet into the FET channel, to provide an additional modulation of the electrostatic barrier induced by the applied gate voltage. The ability of this device to detect changes in magnetization may eventually allow the implementation of reprogrammable devices for universal logic and memory applications.",

author = "Bae, {J. U.} and Lin, {T. Y.} and Y. Yoon and Kim, {S. J.} and A. Imre and W. Porod and Reno, {J. L.} and Bird, {J. P.}",

year = "2008",

month = jul,

day = "4",

doi = "10.1063/1.2951901",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate

AU - Bae, J. U.

AU - Lin, T. Y.

AU - Yoon, Y.

AU - Kim, S. J.

AU - Imre, A.

AU - Porod, W.

AU - Reno, J. L.

AU - Bird, J. P.

PY - 2008/7/4

Y1 - 2008/7/4

N2 - We demonstrate large, and hysteretic, tunneling magnetoresistance (MR) in field-effect transistors (FETs), when their usual nonmagnetic gate is replaced with a nanoscale ferromagnet. Our analysis indicates that the enhanced MR in the tunneling regime results from the ability of the fringing magnetic fields, which emanate from the nanomagnet into the FET channel, to provide an additional modulation of the electrostatic barrier induced by the applied gate voltage. The ability of this device to detect changes in magnetization may eventually allow the implementation of reprogrammable devices for universal logic and memory applications.

AB - We demonstrate large, and hysteretic, tunneling magnetoresistance (MR) in field-effect transistors (FETs), when their usual nonmagnetic gate is replaced with a nanoscale ferromagnet. Our analysis indicates that the enhanced MR in the tunneling regime results from the ability of the fringing magnetic fields, which emanate from the nanomagnet into the FET channel, to provide an additional modulation of the electrostatic barrier induced by the applied gate voltage. The ability of this device to detect changes in magnetization may eventually allow the implementation of reprogrammable devices for universal logic and memory applications.

UR - http://www.scopus.com/inward/record.url?scp=46049087532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049087532&partnerID=8YFLogxK

U2 - 10.1063/1.2951901

DO - 10.1063/1.2951901

M3 - Article

AN - SCOPUS:46049087532

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253101

ER -