Large splitting of the cyclotron-resonance line in AlxGa1−xN/GaN heterostructures

S. Syed; M. J. Manfra; Y. J. Wang; H. L. Stormer; R. J. Molnar

doi:10.1103/PhysRevB.67.241304

Large splitting of the cyclotron-resonance line in Al_xGa_1−xN/GaN heterostructures

S. Syed, M. J. Manfra, Y. J. Wang, H. L. Stormer, R. J. Molnar

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Cyclotron-resonance (CR) measurements on two-dimensional (2D) electrons in Al_xGa_1−xN/GaN heterojunctions reveal large splittings (up to 2 meV) of the CR line for all investigated densities, n_2D, from 1 to 4 × 10¹² cm⁻² over wide ranges of magnetic field. The features resemble a level anticrossing and imply a strong interaction with an unknown excitation of the solid. The critical energy of the splitting varies from 5 to 12 meV and as (Formula presented). The phenomenon resembles data from AlGaAs/GaAs whose origin remains unresolved. It highlights a lack of basic understanding of a very elementary resonance in solids.

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.67.241304
State	Published - Jun 11 2003
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Large splitting of the cyclotron-resonance line in AlxGa1−xN/GaN heterostructures",

abstract = "Cyclotron-resonance (CR) measurements on two-dimensional (2D) electrons in AlxGa1−xN/GaN heterojunctions reveal large splittings (up to 2 meV) of the CR line for all investigated densities, n2D, from 1 to 4 × 1012 cm−2 over wide ranges of magnetic field. The features resemble a level anticrossing and imply a strong interaction with an unknown excitation of the solid. The critical energy of the splitting varies from 5 to 12 meV and as (Formula presented). The phenomenon resembles data from AlGaAs/GaAs whose origin remains unresolved. It highlights a lack of basic understanding of a very elementary resonance in solids.",

author = "S. Syed and Manfra, {M. J.} and Wang, {Y. J.} and Stormer, {H. L.} and Molnar, {R. J.}",

year = "2003",

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doi = "10.1103/PhysRevB.67.241304",

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T1 - Large splitting of the cyclotron-resonance line in AlxGa1−xN/GaN heterostructures

AU - Syed, S.

AU - Manfra, M. J.

AU - Wang, Y. J.

AU - Stormer, H. L.

AU - Molnar, R. J.

PY - 2003/6/11

Y1 - 2003/6/11

N2 - Cyclotron-resonance (CR) measurements on two-dimensional (2D) electrons in AlxGa1−xN/GaN heterojunctions reveal large splittings (up to 2 meV) of the CR line for all investigated densities, n2D, from 1 to 4 × 1012 cm−2 over wide ranges of magnetic field. The features resemble a level anticrossing and imply a strong interaction with an unknown excitation of the solid. The critical energy of the splitting varies from 5 to 12 meV and as (Formula presented). The phenomenon resembles data from AlGaAs/GaAs whose origin remains unresolved. It highlights a lack of basic understanding of a very elementary resonance in solids.

AB - Cyclotron-resonance (CR) measurements on two-dimensional (2D) electrons in AlxGa1−xN/GaN heterojunctions reveal large splittings (up to 2 meV) of the CR line for all investigated densities, n2D, from 1 to 4 × 1012 cm−2 over wide ranges of magnetic field. The features resemble a level anticrossing and imply a strong interaction with an unknown excitation of the solid. The critical energy of the splitting varies from 5 to 12 meV and as (Formula presented). The phenomenon resembles data from AlGaAs/GaAs whose origin remains unresolved. It highlights a lack of basic understanding of a very elementary resonance in solids.

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