Large splitting of the cyclotron-resonance line in AlxGa1−xN/GaN heterostructures

S. Syed, M. J. Manfra, Y. J. Wang, H. L. Stormer, R. J. Molnar

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Cyclotron-resonance (CR) measurements on two-dimensional (2D) electrons in AlxGa1−xN/GaN heterojunctions reveal large splittings (up to 2 meV) of the CR line for all investigated densities, n2D, from 1 to 4 × 1012 cm−2 over wide ranges of magnetic field. The features resemble a level anticrossing and imply a strong interaction with an unknown excitation of the solid. The critical energy of the splitting varies from 5 to 12 meV and as (Formula presented). The phenomenon resembles data from AlGaAs/GaAs whose origin remains unresolved. It highlights a lack of basic understanding of a very elementary resonance in solids.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - Jun 11 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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