Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae, T. Y. Lin, Y. Yoon, Sung Jin Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

Original languageEnglish
Article number022105
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
StatePublished - Aug 1 2007
Externally publishedYes

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quantum wires
hysteresis
nonuniform magnetic fields
ballistics
magnetization
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. / Bae, J. U.; Lin, T. Y.; Yoon, Y.; Kim, Sung Jin; Bird, J. P.; Imre, A.; Porod, W.; Reno, J. L.

In: Applied Physics Letters, Vol. 91, No. 2, 022105, 01.08.2007.

Research output: Contribution to journalArticle

Bae, J. U. ; Lin, T. Y. ; Yoon, Y. ; Kim, Sung Jin ; Bird, J. P. ; Imre, A. ; Porod, W. ; Reno, J. L. / Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. In: Applied Physics Letters. 2007 ; Vol. 91, No. 2.
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