Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae; T. Y. Lin; Y. Yoon; Sung Jin Kim; J. P. Bird; A. Imre; W. Porod; J. L. Reno

doi:10.1063/1.2756270

Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae, T. Y. Lin, Y. Yoon, Sung Jin Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

Original language	English
Article number	022105
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2756270
State	Published - Aug 1 2007
Externally published	Yes

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quantum wires

hysteresis

nonuniform magnetic fields

ballistics

magnetization

electrons

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Bae, J. U., Lin, T. Y., Yoon, Y., Kim, S. J., Bird, J. P., Imre, A., ... Reno, J. L. (2007). Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. Applied Physics Letters, 91(2), [022105]. https://doi.org/10.1063/1.2756270

Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. / Bae, J. U.; Lin, T. Y.; Yoon, Y.; Kim, Sung Jin; Bird, J. P.; Imre, A.; Porod, W.; Reno, J. L.

In: Applied Physics Letters, Vol. 91, No. 2, 022105, 01.08.2007.

Research output: Contribution to journal › Article

Bae, JU, Lin, TY, Yoon, Y, Kim, SJ, Bird, JP, Imre, A, Porod, W & Reno, JL 2007, 'Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets', Applied Physics Letters, vol. 91, no. 2, 022105. https://doi.org/10.1063/1.2756270

Bae JU, Lin TY, Yoon Y, Kim SJ, Bird JP, Imre A et al. Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. Applied Physics Letters. 2007 Aug 1;91(2). 022105. https://doi.org/10.1063/1.2756270

Bae, J. U. ; Lin, T. Y. ; Yoon, Y. ; Kim, Sung Jin ; Bird, J. P. ; Imre, A. ; Porod, W. ; Reno, J. L. / Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. In: Applied Physics Letters. 2007 ; Vol. 91, No. 2.

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10.1063/1.2756270