Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae; T. Y. Lin; Y. Yoon; S. J. Kim; J. P. Bird; A. Imre; W. Porod; J. L. Reno

doi:10.1063/1.2756270

Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae, T. Y. Lin, Y. Yoon, S. J. Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

Electrical and Computer Engineering

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12 Scopus citations

Abstract

The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

Original language	English (US)
Article number	022105
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2756270
State	Published - Aug 1 2007

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Bae, J. U., Lin, T. Y., Yoon, Y., Kim, S. J., Bird, J. P., Imre, A., Porod, W., & Reno, J. L. (2007). Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets. Applied Physics Letters, 91(2), [022105]. https://doi.org/10.1063/1.2756270

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AU - Porod, W.

AU - Reno, J. L.

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10.1063/1.2756270