Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae, T. Y. Lin, Y. Yoon, S. J. Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

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Abstract

The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

Original languageEnglish (US)
Article number022105
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
StatePublished - Aug 1 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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