Ion-implanted silicon X-ray calorimeters: Present and future

Richard L. Kelley, C. A. Allen, Massimiliano Galeazzi, C. A. Kilbourne, D. McCammon, F. S. Porter, A. E. Szymkowiak

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1-100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years.

Original languageEnglish (US)
Pages (from-to)375-380
Number of pages6
JournalJournal of Low Temperature Physics
Volume151
Issue number1-2 PART 1
DOIs
StatePublished - Apr 2008

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Atomic physics
Junction gate field effect transistors
Astrophysics
Thermometers
Silicon
Calorimeters
calorimeters
Pixels
Ions
Semiconductor materials
X rays
silicon
ions
x rays
absorbers (materials)
JFET
atomic physics
thermometers
attachment
absorbers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kelley, R. L., Allen, C. A., Galeazzi, M., Kilbourne, C. A., McCammon, D., Porter, F. S., & Szymkowiak, A. E. (2008). Ion-implanted silicon X-ray calorimeters: Present and future. Journal of Low Temperature Physics, 151(1-2 PART 1), 375-380. https://doi.org/10.1007/s10909-007-9663-8

Ion-implanted silicon X-ray calorimeters : Present and future. / Kelley, Richard L.; Allen, C. A.; Galeazzi, Massimiliano; Kilbourne, C. A.; McCammon, D.; Porter, F. S.; Szymkowiak, A. E.

In: Journal of Low Temperature Physics, Vol. 151, No. 1-2 PART 1, 04.2008, p. 375-380.

Research output: Contribution to journalArticle

Kelley, RL, Allen, CA, Galeazzi, M, Kilbourne, CA, McCammon, D, Porter, FS & Szymkowiak, AE 2008, 'Ion-implanted silicon X-ray calorimeters: Present and future', Journal of Low Temperature Physics, vol. 151, no. 1-2 PART 1, pp. 375-380. https://doi.org/10.1007/s10909-007-9663-8
Kelley RL, Allen CA, Galeazzi M, Kilbourne CA, McCammon D, Porter FS et al. Ion-implanted silicon X-ray calorimeters: Present and future. Journal of Low Temperature Physics. 2008 Apr;151(1-2 PART 1):375-380. https://doi.org/10.1007/s10909-007-9663-8
Kelley, Richard L. ; Allen, C. A. ; Galeazzi, Massimiliano ; Kilbourne, C. A. ; McCammon, D. ; Porter, F. S. ; Szymkowiak, A. E. / Ion-implanted silicon X-ray calorimeters : Present and future. In: Journal of Low Temperature Physics. 2008 ; Vol. 151, No. 1-2 PART 1. pp. 375-380.
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