Interlayer magnetoresistance peak in β″-(BEDT-TTF)2SF5CH2CF 2SO3

X. Su, Fulin Zuo, J. A. Schlueter, Jack M. Williams

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Transport measurements of interlayer magnetoresistance with the field parallel to the current direction have been performed on single crystals of organic superconductor β″-(BEDT-TTF)2SF5CH2CF 2SO3. The magnetoresistance is found to display a pronounced peak as a function of magnetic field below the superconducting transition temperature, similar to those of κ-(BEDT-TTF)2X compounds. Analysis of the magnetoresistance peak in terms of a simple pair and quasiparticle tunneling model gives a physically negligible gap energy.

Original languageEnglish (US)
Pages (from-to)5353-5355
Number of pages3
JournalJournal of Applied Physics
Volume85
Issue number8 II B
StatePublished - Apr 15 1999

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interlayers
organic superconductors
transition temperature
single crystals
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Su, X., Zuo, F., Schlueter, J. A., & Williams, J. M. (1999). Interlayer magnetoresistance peak in β″-(BEDT-TTF)2SF5CH2CF 2SO3 . Journal of Applied Physics, 85(8 II B), 5353-5355.

Interlayer magnetoresistance peak in β″-(BEDT-TTF)2SF5CH2CF 2SO3 . / Su, X.; Zuo, Fulin; Schlueter, J. A.; Williams, Jack M.

In: Journal of Applied Physics, Vol. 85, No. 8 II B, 15.04.1999, p. 5353-5355.

Research output: Contribution to journalArticle

Su, X, Zuo, F, Schlueter, JA & Williams, JM 1999, 'Interlayer magnetoresistance peak in β″-(BEDT-TTF)2SF5CH2CF 2SO3 ', Journal of Applied Physics, vol. 85, no. 8 II B, pp. 5353-5355.
Su X, Zuo F, Schlueter JA, Williams JM. Interlayer magnetoresistance peak in β″-(BEDT-TTF)2SF5CH2CF 2SO3 . Journal of Applied Physics. 1999 Apr 15;85(8 II B):5353-5355.
Su, X. ; Zuo, Fulin ; Schlueter, J. A. ; Williams, Jack M. / Interlayer magnetoresistance peak in β″-(BEDT-TTF)2SF5CH2CF 2SO3 . In: Journal of Applied Physics. 1999 ; Vol. 85, No. 8 II B. pp. 5353-5355.
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