Improved efficiency of ferroelectric Pb(Zr, Ti)O3 (PZT) based photovoltaic device with colloidal quantum dots

Young Hun Paik, Hossein Shokri Kojori, Ju Hyung Yun, Sung Jin Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75% and this is more than 50 times higher than a PZT film only photovoltaic device.

Original languageEnglish (US)
Pages (from-to)247-251
Number of pages5
JournalMaterials Letters
Volume185
DOIs
StatePublished - Dec 15 2016

Fingerprint

Semiconductor quantum dots
Ferroelectric materials
quantum dots
Open circuit voltage
short circuit currents
open circuit voltage
Short circuit currents
Thin films
thin films
Conversion efficiency
Absorption spectra
high voltages
Energy gap
broadband
absorption spectra
Fabrication
fabrication

Keywords

  • Electronic materials
  • Ferroelectrics
  • Solar energy materials

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Improved efficiency of ferroelectric Pb(Zr, Ti)O3 (PZT) based photovoltaic device with colloidal quantum dots. / Paik, Young Hun; Kojori, Hossein Shokri; Yun, Ju Hyung; Kim, Sung Jin.

In: Materials Letters, Vol. 185, 15.12.2016, p. 247-251.

Research output: Contribution to journalArticle

Paik, Young Hun ; Kojori, Hossein Shokri ; Yun, Ju Hyung ; Kim, Sung Jin. / Improved efficiency of ferroelectric Pb(Zr, Ti)O3 (PZT) based photovoltaic device with colloidal quantum dots. In: Materials Letters. 2016 ; Vol. 185. pp. 247-251.
@article{8483db73df7a40248ec705d9da20f744,
title = "Improved efficiency of ferroelectric Pb(Zr, Ti)O3 (PZT) based photovoltaic device with colloidal quantum dots",
abstract = "Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75{\%} and this is more than 50 times higher than a PZT film only photovoltaic device.",
keywords = "Electronic materials, Ferroelectrics, Solar energy materials",
author = "Paik, {Young Hun} and Kojori, {Hossein Shokri} and Yun, {Ju Hyung} and Kim, {Sung Jin}",
year = "2016",
month = "12",
day = "15",
doi = "10.1016/j.matlet.2016.08.082",
language = "English (US)",
volume = "185",
pages = "247--251",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Improved efficiency of ferroelectric Pb(Zr, Ti)O3 (PZT) based photovoltaic device with colloidal quantum dots

AU - Paik, Young Hun

AU - Kojori, Hossein Shokri

AU - Yun, Ju Hyung

AU - Kim, Sung Jin

PY - 2016/12/15

Y1 - 2016/12/15

N2 - Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75% and this is more than 50 times higher than a PZT film only photovoltaic device.

AB - Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75% and this is more than 50 times higher than a PZT film only photovoltaic device.

KW - Electronic materials

KW - Ferroelectrics

KW - Solar energy materials

UR - http://www.scopus.com/inward/record.url?scp=84985041052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84985041052&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2016.08.082

DO - 10.1016/j.matlet.2016.08.082

M3 - Article

VL - 185

SP - 247

EP - 251

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -