Improved efficiency of ferroelectric Pb(Zr, Ti)O3 (PZT) based photovoltaic device with colloidal quantum dots

Young Hun Paik, Hossein Shokri Kojori, Ju Hyung Yun, Sung Jin Kim

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75% and this is more than 50 times higher than a PZT film only photovoltaic device.

Original languageEnglish (US)
Pages (from-to)247-251
Number of pages5
JournalMaterials Letters
Volume185
DOIs
StatePublished - Dec 15 2016

Keywords

  • Electronic materials
  • Ferroelectrics
  • Solar energy materials

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Improved efficiency of ferroelectric Pb(Zr, Ti)O<sub>3</sub> (PZT) based photovoltaic device with colloidal quantum dots'. Together they form a unique fingerprint.

  • Cite this