Hot-electron effects in strongly localized doped silicon at low temperature

Massimiliano Galeazzi, D. Liu, D. McCammon, L. E. Rocks, W. T. Sanders, B. Smith, P. Tan, J. E. Vaillancourt, K. R. Boyce, R. P. Brekosky, J. D. Gygax, R. L. Kelley, C. A. Kilbourne, F. S. Porter, C. M. Stahle, A. E. Szymkowiak

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electrical conductivity in doped semiconductors in the strongly localized variable range hopping regime is currently explained as phonon-assisted electron hopping. While investigating the non-Ohmic behavior of doped silicon at temperatures of 0.05-1 K, we found strong evidence for the existence of separate temperatures for the electron and phonon systems analogous to the hot-electron effect in metals. This behavior cannot easily be explained by phonon-assisted hopping and seems to favor instead a direct electron-electron interaction at low temperature. A hot-electron model makes definite predictions for the dependence of the electrical conductivity on the bias power, the frequency dependence of the resistance nonlinearities, and for an additional noise term. We have made a systematic investigation of these quantities, and find all of them in good agreement with the model predictions over a wide range of parameters.

Original languageEnglish (US)
Article number155207
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number15
DOIs
StatePublished - Oct 18 2007

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Hot electrons
Silicon
hot electrons
silicon
Electron-electron interactions
electrical resistivity
electrons
Electrons
predictions
Temperature
electron scattering
Metals
nonlinearity
Semiconductor materials
temperature
metals
Electric Conductivity

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hot-electron effects in strongly localized doped silicon at low temperature. / Galeazzi, Massimiliano; Liu, D.; McCammon, D.; Rocks, L. E.; Sanders, W. T.; Smith, B.; Tan, P.; Vaillancourt, J. E.; Boyce, K. R.; Brekosky, R. P.; Gygax, J. D.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.; Stahle, C. M.; Szymkowiak, A. E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 76, No. 15, 155207, 18.10.2007.

Research output: Contribution to journalArticle

Galeazzi, M, Liu, D, McCammon, D, Rocks, LE, Sanders, WT, Smith, B, Tan, P, Vaillancourt, JE, Boyce, KR, Brekosky, RP, Gygax, JD, Kelley, RL, Kilbourne, CA, Porter, FS, Stahle, CM & Szymkowiak, AE 2007, 'Hot-electron effects in strongly localized doped silicon at low temperature', Physical Review B - Condensed Matter and Materials Physics, vol. 76, no. 15, 155207. https://doi.org/10.1103/PhysRevB.76.155207
Galeazzi, Massimiliano ; Liu, D. ; McCammon, D. ; Rocks, L. E. ; Sanders, W. T. ; Smith, B. ; Tan, P. ; Vaillancourt, J. E. ; Boyce, K. R. ; Brekosky, R. P. ; Gygax, J. D. ; Kelley, R. L. ; Kilbourne, C. A. ; Porter, F. S. ; Stahle, C. M. ; Szymkowiak, A. E. / Hot-electron effects in strongly localized doped silicon at low temperature. In: Physical Review B - Condensed Matter and Materials Physics. 2007 ; Vol. 76, No. 15.
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