Hole transport in microcrystalline chlorophyll a

H. Kassi, S. Hotchandani, Roger Leblanc

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In order to study the hole transport in chlorophyll a (Chl a), time-of-flight measurements have been performed on Al/Chl a/Au sandwich cells. The hole transients are almost featureless and the transit times have been determined from log-current-log time plots. In view of the lack of universality in post-transit region and the tendency of mobility to decrease with increasing field, as observed from log μ vs E plots, the hole transport in Chl a has been described in terms of charge transport based on the disorder formalism of Bässler and co-workers. The decrease of hole mobility with field suggests a strong involvement of off-diagonal disorder.

Original languageEnglish
Pages (from-to)2283-2285
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number18
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

Fingerprint

chlorophylls
plots
disorders
hole mobility
transit time
transit
tendencies
formalism
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hole transport in microcrystalline chlorophyll a. / Kassi, H.; Hotchandani, S.; Leblanc, Roger.

In: Applied Physics Letters, Vol. 62, No. 18, 01.12.1993, p. 2283-2285.

Research output: Contribution to journalArticle

Kassi, H. ; Hotchandani, S. ; Leblanc, Roger. / Hole transport in microcrystalline chlorophyll a. In: Applied Physics Letters. 1993 ; Vol. 62, No. 18. pp. 2283-2285.
@article{43b70eff36da496888f39fc7a10f2e57,
title = "Hole transport in microcrystalline chlorophyll a",
abstract = "In order to study the hole transport in chlorophyll a (Chl a), time-of-flight measurements have been performed on Al/Chl a/Au sandwich cells. The hole transients are almost featureless and the transit times have been determined from log-current-log time plots. In view of the lack of universality in post-transit region and the tendency of mobility to decrease with increasing field, as observed from log μ vs E plots, the hole transport in Chl a has been described in terms of charge transport based on the disorder formalism of B{\"a}ssler and co-workers. The decrease of hole mobility with field suggests a strong involvement of off-diagonal disorder.",
author = "H. Kassi and S. Hotchandani and Roger Leblanc",
year = "1993",
month = "12",
day = "1",
doi = "10.1063/1.109396",
language = "English",
volume = "62",
pages = "2283--2285",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Hole transport in microcrystalline chlorophyll a

AU - Kassi, H.

AU - Hotchandani, S.

AU - Leblanc, Roger

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In order to study the hole transport in chlorophyll a (Chl a), time-of-flight measurements have been performed on Al/Chl a/Au sandwich cells. The hole transients are almost featureless and the transit times have been determined from log-current-log time plots. In view of the lack of universality in post-transit region and the tendency of mobility to decrease with increasing field, as observed from log μ vs E plots, the hole transport in Chl a has been described in terms of charge transport based on the disorder formalism of Bässler and co-workers. The decrease of hole mobility with field suggests a strong involvement of off-diagonal disorder.

AB - In order to study the hole transport in chlorophyll a (Chl a), time-of-flight measurements have been performed on Al/Chl a/Au sandwich cells. The hole transients are almost featureless and the transit times have been determined from log-current-log time plots. In view of the lack of universality in post-transit region and the tendency of mobility to decrease with increasing field, as observed from log μ vs E plots, the hole transport in Chl a has been described in terms of charge transport based on the disorder formalism of Bässler and co-workers. The decrease of hole mobility with field suggests a strong involvement of off-diagonal disorder.

UR - http://www.scopus.com/inward/record.url?scp=0002578933&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0002578933&partnerID=8YFLogxK

U2 - 10.1063/1.109396

DO - 10.1063/1.109396

M3 - Article

AN - SCOPUS:0002578933

VL - 62

SP - 2283

EP - 2285

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -