Abstract
Measurements of thermal conductivity versus temperature over a broad range of doping in (Formula presented) and (Formula presented) suggest that small domains of localized holes develop for hole concentrations near (Formula presented) The data imply a mechanism for localization that is intrinsic to the (Formula presented) planes and is enhanced via pinning associated with oxygen-vacancy clusters.
Original language | English (US) |
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Pages (from-to) | 3823-3826 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 59 |
Issue number | 5 |
DOIs | |
State | Published - 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics