Measurements of thermal conductivity versus temperature over a broad range of doping in (Formula presented) and (Formula presented) suggest that small domains of localized holes develop for hole concentrations near (Formula presented) The data imply a mechanism for localization that is intrinsic to the (Formula presented) planes and is enhanced via pinning associated with oxygen-vacancy clusters.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics