High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, Sheyum Syed, D. Simonian, H. L. Stormer

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm-2, 6.0 × 1012 cm-2, and 5.8 × 1012 cm-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - 2000
Externally publishedYes

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Gas source molecular beam epitaxy
Aluminum Oxide
Sapphire
Heterojunctions
Galvanomagnetic effects
Hall mobility
Ammonia
Buffers
Doping (additives)
Temperature
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jurkovic, M. J., Li, L. K., Turk, B., Wang, W. I., Syed, S., Simonian, D., & Stormer, H. L. (2000). High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. In Materials Research Society Symposium - Proceedings (Vol. 595)

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. / Jurkovic, M. J.; Li, L. K.; Turk, B.; Wang, W. I.; Syed, Sheyum; Simonian, D.; Stormer, H. L.

Materials Research Society Symposium - Proceedings. Vol. 595 2000.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Jurkovic, MJ, Li, LK, Turk, B, Wang, WI, Syed, S, Simonian, D & Stormer, HL 2000, High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. in Materials Research Society Symposium - Proceedings. vol. 595.
Jurkovic MJ, Li LK, Turk B, Wang WI, Syed S, Simonian D et al. High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. In Materials Research Society Symposium - Proceedings. Vol. 595. 2000
Jurkovic, M. J. ; Li, L. K. ; Turk, B. ; Wang, W. I. ; Syed, Sheyum ; Simonian, D. ; Stormer, H. L. / High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. Materials Research Society Symposium - Proceedings. Vol. 595 2000.
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AU - Jurkovic, M. J.

AU - Li, L. K.

AU - Turk, B.

AU - Wang, W. I.

AU - Syed, Sheyum

AU - Simonian, D.

AU - Stormer, H. L.

PY - 2000

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N2 - Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm-2, 6.0 × 1012 cm-2, and 5.8 × 1012 cm-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

AB - Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm-2, 6.0 × 1012 cm-2, and 5.8 × 1012 cm-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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