High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

M. J. Jurkovic; L. K. Li; B. Turk; W. I. Wang; S. Syed; D. Simonian; H. L. Stormer

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer

Research output: Contribution to journal › Article

Abstract

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm²/Vs with carrier sheet densities of 6.1 × 10¹² cm^-2, 6.0 × 10¹² cm^-2, and 5.8 × 10¹² cm^-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Original language	English (US)
Pages (from-to)	W811-W817
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - Dec 1 2000
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Jurkovic, M. J., Li, L. K., Turk, B., Wang, W. I., Syed, S., Simonian, D., & Stormer, H. L. (2000). High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. Materials Research Society Symposium - Proceedings, 595, W811-W817.

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title = "High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer",

abstract = "Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm-2, 6.0 × 1012 cm-2, and 5.8 × 1012 cm-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.",

author = "Jurkovic, {M. J.} and Li, {L. K.} and B. Turk and Wang, {W. I.} and S. Syed and D. Simonian and Stormer, {H. L.}",

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T1 - High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

AU - Jurkovic, M. J.

AU - Li, L. K.

AU - Turk, B.

AU - Wang, W. I.

AU - Syed, S.

AU - Simonian, D.

AU - Stormer, H. L.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm-2, 6.0 × 1012 cm-2, and 5.8 × 1012 cm-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

AB - Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm-2, 6.0 × 1012 cm-2, and 5.8 × 1012 cm-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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