High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, Sheyum Syed, D. Simonian, H. L. Stormer

Research output: Contribution to journalArticle

Abstract

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm 2/Vs with carrier sheet densities of 6.1 × 10 12 cm -2, 6.0 × 10 12 cm -2, and 5.8 × 10 12 cm -2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
StatePublished - 2000
Externally publishedYes

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Gas source molecular beam epitaxy
Aluminum Oxide
Sapphire
Heterojunctions
Galvanomagnetic effects
Hall mobility
Ammonia
Buffers
Doping (additives)
Temperature
aluminum gallium nitride

ASJC Scopus subject areas

  • Materials Science(all)

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High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer. / Jurkovic, M. J.; Li, L. K.; Turk, B.; Wang, W. I.; Syed, Sheyum; Simonian, D.; Stormer, H. L.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 5, No. SUPPL. 1, 2000.

Research output: Contribution to journalArticle

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T1 - High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

AU - Jurkovic, M. J.

AU - Li, L. K.

AU - Turk, B.

AU - Wang, W. I.

AU - Syed, Sheyum

AU - Simonian, D.

AU - Stormer, H. L.

PY - 2000

Y1 - 2000

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AB - Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm 2/Vs with carrier sheet densities of 6.1 × 10 12 cm -2, 6.0 × 10 12 cm -2, and 5.8 × 10 12 cm -2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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