High-performance ultraviolet detector employing out-of-plane rGO/MoS2 PN heterostructure

Rahul Kumar, Neeraj Goel, Ramesh Raliya, Pratim Biswas, Mahesh Kumar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of \sim 6.92 A)/W and an excellent detectivity of 1.26 \times 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.

Original languageEnglish (US)
Title of host publication2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538691182
DOIs
StatePublished - Dec 2018
Externally publishedYes
Event4th IEEE International Conference on Emerging Electronics, ICEE 2018 - Bengaluru, India
Duration: Dec 17 2018Dec 19 2018

Publication series

Name2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018

Conference

Conference4th IEEE International Conference on Emerging Electronics, ICEE 2018
Country/TerritoryIndia
CityBengaluru
Period12/17/1812/19/18

Keywords

  • 2DMoS2
  • CVD
  • Heterostructure
  • RGO
  • UV detector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Process Chemistry and Technology

Fingerprint

Dive into the research topics of 'High-performance ultraviolet detector employing out-of-plane rGO/MoS2 PN heterostructure'. Together they form a unique fingerprint.

Cite this