High-performance ultraviolet detector employing out-of-plane rGO/MoS2 PN heterostructure

Rahul Kumar; Neeraj Goel; Ramesh Raliya; Pratim Biswas; Mahesh Kumar

doi:10.1109/ICEE44586.2018.8937993

High-performance ultraviolet detector employing out-of-plane rGO/MoS₂ PN heterostructure

Rahul Kumar, Neeraj Goel, Ramesh Raliya, Pratim Biswas, Mahesh Kumar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS₂ with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS₂ photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS₂ interface. Therefore, the rGO/MoS₂ device showed a notably improved photo-responsivity of \sim 6.92 A)/W and an excellent detectivity of 1.26 \times 10¹² Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.

Original language	English (US)
Title of host publication	2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538691182
DOIs	https://doi.org/10.1109/ICEE44586.2018.8937993
State	Published - Dec 2018
Externally published	Yes
Event	4th IEEE International Conference on Emerging Electronics, ICEE 2018 - Bengaluru, India Duration: Dec 17 2018 → Dec 19 2018

Publication series

Name	2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018

Conference

Conference	4th IEEE International Conference on Emerging Electronics, ICEE 2018
Country/Territory	India
City	Bengaluru
Period	12/17/18 → 12/19/18

Keywords

2DMoS2
CVD
Heterostructure
RGO
UV detector

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Process Chemistry and Technology

Access to Document

10.1109/ICEE44586.2018.8937993

Cite this

Kumar, R., Goel, N., Raliya, R., Biswas, P., & Kumar, M. (2018). High-performance ultraviolet detector employing out-of-plane rGO/MoS₂ PN heterostructure. In 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018 [8937993] (2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEE44586.2018.8937993

High-performance ultraviolet detector employing out-of-plane rGO/MoS₂ PN heterostructure. / Kumar, Rahul; Goel, Neeraj; Raliya, Ramesh; Biswas, Pratim; Kumar, Mahesh.

2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8937993 (2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumar, R, Goel, N, Raliya, R, Biswas, P & Kumar, M 2018, High-performance ultraviolet detector employing out-of-plane rGO/MoS₂ PN heterostructure. in 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018., 8937993, 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018, Institute of Electrical and Electronics Engineers Inc., 4th IEEE International Conference on Emerging Electronics, ICEE 2018, Bengaluru, India, 12/17/18. https://doi.org/10.1109/ICEE44586.2018.8937993

Kumar R, Goel N, Raliya R, Biswas P, Kumar M. High-performance ultraviolet detector employing out-of-plane rGO/MoS₂ PN heterostructure. In 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8937993. (2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018). https://doi.org/10.1109/ICEE44586.2018.8937993

Kumar, Rahul ; Goel, Neeraj ; Raliya, Ramesh ; Biswas, Pratim ; Kumar, Mahesh. / High-performance ultraviolet detector employing out-of-plane rGO/MoS₂ PN heterostructure. 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018).

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title = "High-performance ultraviolet detector employing out-of-plane rGO/MoS2 PN heterostructure",

abstract = "We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of \sim 6.92 A)/W and an excellent detectivity of 1.26 \times 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.",

keywords = "2DMoS2, CVD, Heterostructure, RGO, UV detector",

author = "Rahul Kumar and Neeraj Goel and Ramesh Raliya and Pratim Biswas and Mahesh Kumar",

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AU - Kumar, Mahesh

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N2 - We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of \sim 6.92 A)/W and an excellent detectivity of 1.26 \times 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.

AB - We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of \sim 6.92 A)/W and an excellent detectivity of 1.26 \times 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.

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