High electron mobility AlGan/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy

L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer

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Abstract

High-quality AlGaN/GaN heterostructures have been grown by ammonia gas-source molecular-beam epitaxy on sapphire substrates. Incorporation of a low-temperature-grown AlN interlayer during the growth of a thick GaN buffer is shown to substantially increase the mobility of the piezoelectrically induced two-dimensional electron gas (2DEG) in unintentionally doped AlGaN/GaN heterostructures. For an optimized AlN interlayer thickness of 30 nm, electron mobilities as high as 1500 cm2/V s at room temperature, 10 310cm2/V s at 77 K, and 12 000 cm2/V s at 0.3 K were obtained with sheet densities of 9 × 1012 cm-2 and 6 × 1012 cm-2 at room temperature and 77 K, respectively. The 2DEG was confirmed by strong and well-resolved Shubnikov-de Haas oscillations starting at 3.0 T. Photoluminescence measurements and atomic force microscopy revealed that the densities of native donors and grain boundaries were effectively reduced in the AlGaN/GaN heterostructures incorporating low-temperature-grown AlN interlayers.

Original languageEnglish (US)
Pages (from-to)742-744
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number6
DOIs
StatePublished - Feb 7 2000
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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