Graded bit patterned magnetic arrays fabricated via angled low-energy He ion irradiation

L. V. Chang, A. Nasruallah, P. Ruchhoeft, S. Khizroev, D. Litvinov

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A bit patterned magnetic array based on Co/Pd magnetic multilayers with a binary perpendicular magnetic anisotropy distribution was fabricated. The binary anisotropy distribution was attained through angled helium ion irradiation of a bit edge using hydrogen silsesquioxane (HSQ) resist as an ion stopping layer to protect the rest of the bit. The viability of this technique was explored numerically and evaluated through magnetic measurements of the prepared bit patterned magnetic array. The resulting graded bit patterned magnetic array showed a 35% reduction in coercivity and a 9% narrowing of the standard deviation of the switching field.

Original languageEnglish (US)
Article number275705
JournalNanotechnology
Volume23
Issue number27
DOIs
StatePublished - Jul 11 2012

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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