Giant dielectric permittivity of electron-doped manganite thin films, Ca 1-xLa xO 3 (0≤x≤0.03)

Joshua Cohn, M. Peterca, J. J. Neumeier

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34 Citations (Scopus)

Abstract

A giant low-frequency, in-plane dielectric constant, ∈ ∼ 10 6, for epitaxial thin films of Ca 1-xLa xMnO 3 (x≤0.03) was observed over a broad temperature range, 4 K≤T≤300 K. This phenomenon is attributed to an internal barrier-layer capacitor (IBLC) structure, with Schottky contacts between semiconducting grains. The room-temperature ∈ increases substantially with electron (La) doping, consistent with a simple model for IBLCs. The measured values of ∈ exceed those of conventional two-phase IBLC materials based on (Ba, Sr)TiO 3 as well as on recently discovered CaCu 3Ti 4O 12 and (Li,Ti)-doped NiO.

Original languageEnglish (US)
Article number034102
JournalJournal of Applied Physics
Volume97
Issue number3
DOIs
StatePublished - Feb 1 2005

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barrier layers
capacitors
permittivity
thin films
electric contacts
electrons
low frequencies
room temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Giant dielectric permittivity of electron-doped manganite thin films, Ca 1-xLa xO 3 (0≤x≤0.03). / Cohn, Joshua; Peterca, M.; Neumeier, J. J.

In: Journal of Applied Physics, Vol. 97, No. 3, 034102, 01.02.2005.

Research output: Contribution to journalArticle

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