### Abstract

Here we present a micron scaled piezoelectric energy harvester fabricated in a commercial Complementary Metal Oxide Semiconductor (CMOS) technology. The device is a multilayer cantilever clamped on one end that utilizes interdigitated transducers (IDTs) to collect charge from a zinc oxide (ZnO) piezoelectric layer. Hence the cantilever beam operates in the d _{33} mode in order to produce more energy than a d _{31} structure. Finite element modeling and simulations are performed to analyze the voltage on the IDTs for various frequencies with and without the addition of a proof mass. The results presented demonstrate that commercial FEM software can help designers to determine parameters such as material thickness, proof mass, and IDT dimensions for novel piezoelectric energy harvester devices pre-fabrication.

Original language | English |
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Title of host publication | Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 |

Pages | 558-561 |

Number of pages | 4 |

State | Published - Aug 17 2012 |

Event | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: Jun 18 2012 → Jun 21 2012 |

### Other

Other | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 |
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Country | United States |

City | Santa Clara, CA |

Period | 6/18/12 → 6/21/12 |

### Fingerprint

### Keywords

- Complementary metal oxide semiconductor
- Finite element modeling
- Interdigitated transducers
- Piezoelectric
- Zinc oxide

### ASJC Scopus subject areas

- Ceramics and Composites
- Surfaces, Coatings and Films

### Cite this

*Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012*(pp. 558-561)

**Finite element modeling and simulation of piezoelectric energy harvesters fabricated in CMOS technology.** / Mok, A.; Tigli, Onur.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012.*pp. 558-561, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 6/18/12.

}

TY - GEN

T1 - Finite element modeling and simulation of piezoelectric energy harvesters fabricated in CMOS technology

AU - Mok, A.

AU - Tigli, Onur

PY - 2012/8/17

Y1 - 2012/8/17

N2 - Here we present a micron scaled piezoelectric energy harvester fabricated in a commercial Complementary Metal Oxide Semiconductor (CMOS) technology. The device is a multilayer cantilever clamped on one end that utilizes interdigitated transducers (IDTs) to collect charge from a zinc oxide (ZnO) piezoelectric layer. Hence the cantilever beam operates in the d 33 mode in order to produce more energy than a d 31 structure. Finite element modeling and simulations are performed to analyze the voltage on the IDTs for various frequencies with and without the addition of a proof mass. The results presented demonstrate that commercial FEM software can help designers to determine parameters such as material thickness, proof mass, and IDT dimensions for novel piezoelectric energy harvester devices pre-fabrication.

AB - Here we present a micron scaled piezoelectric energy harvester fabricated in a commercial Complementary Metal Oxide Semiconductor (CMOS) technology. The device is a multilayer cantilever clamped on one end that utilizes interdigitated transducers (IDTs) to collect charge from a zinc oxide (ZnO) piezoelectric layer. Hence the cantilever beam operates in the d 33 mode in order to produce more energy than a d 31 structure. Finite element modeling and simulations are performed to analyze the voltage on the IDTs for various frequencies with and without the addition of a proof mass. The results presented demonstrate that commercial FEM software can help designers to determine parameters such as material thickness, proof mass, and IDT dimensions for novel piezoelectric energy harvester devices pre-fabrication.

KW - Complementary metal oxide semiconductor

KW - Finite element modeling

KW - Interdigitated transducers

KW - Piezoelectric

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84864943239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864943239&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84864943239

SN - 9781466562752

SP - 558

EP - 561

BT - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

ER -