Abstract
The f-sum rule, relating effective masses to oscillator strengths, is extended to semiconducting superlattices and applied to GaAs-(Ga,Al)As and HgTe-CdTe. This novel approach is implemented analytically by use of the envelope-function approximation to calculate both parallel and perpendicular masses and is used to account for their difference physically. Agreement with experiment is excellent, but in HgTe-CdTe only if the valence-band offset is small.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2352-2355 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 59 |
| Issue number | 20 |
| DOIs | |
| State | Published - 1987 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
F-sum rule and effective masses in superlattices. / Johnson, Neil F; Ehrenreich, H.; Hass, K. C.; McGill, T. C.
In: Physical Review Letters, Vol. 59, No. 20, 1987, p. 2352-2355.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - F-sum rule and effective masses in superlattices
AU - Johnson, Neil F
AU - Ehrenreich, H.
AU - Hass, K. C.
AU - McGill, T. C.
PY - 1987
Y1 - 1987
N2 - The f-sum rule, relating effective masses to oscillator strengths, is extended to semiconducting superlattices and applied to GaAs-(Ga,Al)As and HgTe-CdTe. This novel approach is implemented analytically by use of the envelope-function approximation to calculate both parallel and perpendicular masses and is used to account for their difference physically. Agreement with experiment is excellent, but in HgTe-CdTe only if the valence-band offset is small.
AB - The f-sum rule, relating effective masses to oscillator strengths, is extended to semiconducting superlattices and applied to GaAs-(Ga,Al)As and HgTe-CdTe. This novel approach is implemented analytically by use of the envelope-function approximation to calculate both parallel and perpendicular masses and is used to account for their difference physically. Agreement with experiment is excellent, but in HgTe-CdTe only if the valence-band offset is small.
UR - http://www.scopus.com/inward/record.url?scp=4143084104&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4143084104&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.59.2352
DO - 10.1103/PhysRevLett.59.2352
M3 - Article
AN - SCOPUS:4143084104
VL - 59
SP - 2352
EP - 2355
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 20
ER -