Abstract
The f-sum rule, relating effective masses to oscillator strengths, is extended to semiconducting superlattices and applied to GaAs-(Ga,Al)As and HgTe-CdTe. This novel approach is implemented analytically by use of the envelope-function approximation to calculate both parallel and perpendicular masses and is used to account for their difference physically. Agreement with experiment is excellent, but in HgTe-CdTe only if the valence-band offset is small.
Original language | English (US) |
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Pages (from-to) | 2352-2355 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 59 |
Issue number | 20 |
DOIs | |
State | Published - Jan 1 1987 |
ASJC Scopus subject areas
- Physics and Astronomy(all)