Electron scattering in AlGaN/GaN structures

S. Syed, M. J. Manfra, Y. J. Wang, R. J. Molnar, H. L. Stormer

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


The data on mobility lifetime τ t, quantum lifetime τ q, and cyclotron resonance lifetime τ CR of of a sequences of high mobility two-dimensional electron gases in the AlGaN/GaN heterostructures was presented. It was observed that the heterostructures were grown by molecular beam epitaxy on GaN templates prepared by hydride vapor-phase epitaxy on sapphire substrates. It was observed that τ R and τ t provided a measure to deduce the average electron scattering angle in the heterostructures. Results form modeling Shubnikov de Haas (SdH) oscillations show that τ q was affected by density fluctuations.

Original languageEnglish (US)
Pages (from-to)1507-1509
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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