Electron scattering in AlGaN/GaN structures

S. Syed, M. J. Manfra, Y. J. Wang, R. J. Molnar, H. L. Stormer

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The data on mobility lifetime τ t, quantum lifetime τ q, and cyclotron resonance lifetime τ CR of of a sequences of high mobility two-dimensional electron gases in the AlGaN/GaN heterostructures was presented. It was observed that the heterostructures were grown by molecular beam epitaxy on GaN templates prepared by hydride vapor-phase epitaxy on sapphire substrates. It was observed that τ R and τ t provided a measure to deduce the average electron scattering angle in the heterostructures. Results form modeling Shubnikov de Haas (SdH) oscillations show that τ q was affected by density fluctuations.

Original languageEnglish (US)
Pages (from-to)1507-1509
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Syed, S., Manfra, M. J., Wang, Y. J., Molnar, R. J., & Stormer, H. L. (2004). Electron scattering in AlGaN/GaN structures. Applied Physics Letters, 84(9), 1507-1509. https://doi.org/10.1063/1.1655704