The data on mobility lifetime τ t, quantum lifetime τ q, and cyclotron resonance lifetime τ CR of of a sequences of high mobility two-dimensional electron gases in the AlGaN/GaN heterostructures was presented. It was observed that the heterostructures were grown by molecular beam epitaxy on GaN templates prepared by hydride vapor-phase epitaxy on sapphire substrates. It was observed that τ R and τ t provided a measure to deduce the average electron scattering angle in the heterostructures. Results form modeling Shubnikov de Haas (SdH) oscillations show that τ q was affected by density fluctuations.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)