Electrical resistance and the time-dependent oxidation of semicontinuous bismuth films

Joshua Cohn, C. Uher

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on the electrical resistance and time-dependent oxidation of thin (≲90 Å) semicontinuous bismuth films. An increase in the room temperature sheet resistance with exposure to air is correlated with the growth of insulating Bi2O3 at the surfaces and internal boundaries between bismuth particles. For short oxidation times t, the resistance increases as R ∝t1/2, consistent with a parabolic oxide growth law. At longer times the resistance follows the classical percolation law R∝∥ tc-t∥, where tc is a critical exposure time and μ≅1.3 is a critical exponent for two-dimensional systems.

Original languageEnglish (US)
Pages (from-to)2045-2048
Number of pages4
JournalJournal of Applied Physics
Volume66
Issue number5
DOIs
StatePublished - 1989
Externally publishedYes

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electrical resistance
bismuth
oxidation
exponents
oxides
air
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical resistance and the time-dependent oxidation of semicontinuous bismuth films. / Cohn, Joshua; Uher, C.

In: Journal of Applied Physics, Vol. 66, No. 5, 1989, p. 2045-2048.

Research output: Contribution to journalArticle

@article{a371a3f8f04349d0afb7ba1fc0bad96e,
title = "Electrical resistance and the time-dependent oxidation of semicontinuous bismuth films",
abstract = "We report on the electrical resistance and time-dependent oxidation of thin (≲90 {\AA}) semicontinuous bismuth films. An increase in the room temperature sheet resistance with exposure to air is correlated with the growth of insulating Bi2O3 at the surfaces and internal boundaries between bismuth particles. For short oxidation times t, the resistance increases as R□ ∝t1/2, consistent with a parabolic oxide growth law. At longer times the resistance follows the classical percolation law R□∝∥ tc-t∥-μ, where tc is a critical exposure time and μ≅1.3 is a critical exponent for two-dimensional systems.",
author = "Joshua Cohn and C. Uher",
year = "1989",
doi = "10.1063/1.344344",
language = "English (US)",
volume = "66",
pages = "2045--2048",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Electrical resistance and the time-dependent oxidation of semicontinuous bismuth films

AU - Cohn, Joshua

AU - Uher, C.

PY - 1989

Y1 - 1989

N2 - We report on the electrical resistance and time-dependent oxidation of thin (≲90 Å) semicontinuous bismuth films. An increase in the room temperature sheet resistance with exposure to air is correlated with the growth of insulating Bi2O3 at the surfaces and internal boundaries between bismuth particles. For short oxidation times t, the resistance increases as R□ ∝t1/2, consistent with a parabolic oxide growth law. At longer times the resistance follows the classical percolation law R□∝∥ tc-t∥-μ, where tc is a critical exposure time and μ≅1.3 is a critical exponent for two-dimensional systems.

AB - We report on the electrical resistance and time-dependent oxidation of thin (≲90 Å) semicontinuous bismuth films. An increase in the room temperature sheet resistance with exposure to air is correlated with the growth of insulating Bi2O3 at the surfaces and internal boundaries between bismuth particles. For short oxidation times t, the resistance increases as R□ ∝t1/2, consistent with a parabolic oxide growth law. At longer times the resistance follows the classical percolation law R□∝∥ tc-t∥-μ, where tc is a critical exposure time and μ≅1.3 is a critical exponent for two-dimensional systems.

UR - http://www.scopus.com/inward/record.url?scp=3342952394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3342952394&partnerID=8YFLogxK

U2 - 10.1063/1.344344

DO - 10.1063/1.344344

M3 - Article

VL - 66

SP - 2045

EP - 2048

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -