TY - JOUR
T1 - Electrical properties and topography of SnO 2 thin films prepared by reactive sputtering
AU - Brousseau, J. L.
AU - Bourque, H.
AU - Tessier, A.
AU - Leblanc, R. M.
N1 - Funding Information:
The authors thank Mrs. D. Côté for preliminary work on this research. A grant from the Natural Sciences and Engineering Research Council of Canada (NSERC) is gratefully acknowledged.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 1997/3
Y1 - 1997/3
N2 - A scanning tunneling microscopy study of the topology of thin films of SnO2 has been conducted. The films were deposited using dc reactive magnetron sputtering on microscope slides heated to 150°C. No annealing treatments were needed. For films of 125 Å to 2000 Å, the grain size was proportional to the thickness of the films. A study of the O2 partial pressure showed that films made with a pressure in the 10-6 Torr range gave a quasi-amorphous film. For films made with higher O2 partial pressure, the grain size increased. Scanning tunneling microscopy showed a good crystallinity for these films. The transparency was greater than 95% in the 400-800 nm wavelength region for films 125 A thick. We obtained a film resistivity of 4.5 × 10-3 Ω cm, a carrier concentration of 8.9 × 1019 cm-3 and a Hall mobility of 20.77 cm2 V-1 s-1. With a relatively good resistivity in the 10-3 Ω cm range and a mobility around 18 cm2 V-1 s-1, we made films having a carrier concentration adjustable by one order of magnitude in the 1019 cm-3 range.
AB - A scanning tunneling microscopy study of the topology of thin films of SnO2 has been conducted. The films were deposited using dc reactive magnetron sputtering on microscope slides heated to 150°C. No annealing treatments were needed. For films of 125 Å to 2000 Å, the grain size was proportional to the thickness of the films. A study of the O2 partial pressure showed that films made with a pressure in the 10-6 Torr range gave a quasi-amorphous film. For films made with higher O2 partial pressure, the grain size increased. Scanning tunneling microscopy showed a good crystallinity for these films. The transparency was greater than 95% in the 400-800 nm wavelength region for films 125 A thick. We obtained a film resistivity of 4.5 × 10-3 Ω cm, a carrier concentration of 8.9 × 1019 cm-3 and a Hall mobility of 20.77 cm2 V-1 s-1. With a relatively good resistivity in the 10-3 Ω cm range and a mobility around 18 cm2 V-1 s-1, we made films having a carrier concentration adjustable by one order of magnitude in the 1019 cm-3 range.
UR - http://www.scopus.com/inward/record.url?scp=0031103771&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031103771&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(96)00679-4
DO - 10.1016/S0169-4332(96)00679-4
M3 - Article
AN - SCOPUS:0031103771
VL - 108
SP - 351
EP - 358
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3
ER -