Electrical properties and topography of SnO 2 thin films prepared by reactive sputtering

J. L. Brousseau, H. Bourque, A. Tessier, R. M. Leblanc

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26 Scopus citations


A scanning tunneling microscopy study of the topology of thin films of SnO2 has been conducted. The films were deposited using dc reactive magnetron sputtering on microscope slides heated to 150°C. No annealing treatments were needed. For films of 125 Å to 2000 Å, the grain size was proportional to the thickness of the films. A study of the O2 partial pressure showed that films made with a pressure in the 10-6 Torr range gave a quasi-amorphous film. For films made with higher O2 partial pressure, the grain size increased. Scanning tunneling microscopy showed a good crystallinity for these films. The transparency was greater than 95% in the 400-800 nm wavelength region for films 125 A thick. We obtained a film resistivity of 4.5 × 10-3 Ω cm, a carrier concentration of 8.9 × 1019 cm-3 and a Hall mobility of 20.77 cm2 V-1 s-1. With a relatively good resistivity in the 10-3 Ω cm range and a mobility around 18 cm2 V-1 s-1, we made films having a carrier concentration adjustable by one order of magnitude in the 1019 cm-3 range.

Original languageEnglish (US)
Pages (from-to)351-358
Number of pages8
JournalApplied Surface Science
Issue number3
StatePublished - Mar 1997

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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