Effect of post-deposition processing on ZnO thin films and devices

Tingfang Yen, Alan Haungs, Sung Jin Kim, Alexander Cartwright, Wayne A. Anderson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Post-deposition processing was conducted on ZnO thin films deposited by radio frequency (RF) magnetron sputtering. Rapid thermal annealing (RTA) and ion implantation followed by RTA gave increased conductivity and the latter increased Hall-effect mobility from 1.7 cm 2 V -1 s -1 to 9.5 cm 2 V -1 s -1 Metal-semiconductor-metal photodetectors (MSM-PDs) had a low dark current, a high ratio of photo to dark current, and a high responsivity of 2.1 A/W. Current transport mechanisms of MSM-PDs with post-annealing exhibited two primary space-charge-limited mechanisms, m > 2 and m < 1, following I ≈ V m. The non-annealed ZnO film gave one mechanism with m < 1 in photo I-V. Response to a femtosecond pulse gave rise and fall times in the range of 12 ns to 29 ns.

Original languageEnglish
Pages (from-to)568-572
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
StatePublished - May 1 2010
Externally publishedYes

Fingerprint

Metals
Thin films
Rapid thermal annealing
Dark currents
thin films
Processing
Photodetectors
dark current
metals
annealing
photometers
Semiconductor materials
Hall effect
Ultrashort pulses
Electric space charge
Ion implantation
Magnetron sputtering
ion implantation
space charge
radio frequencies

Keywords

  • Annealing
  • Detector
  • Nitrogen
  • Sputtering
  • Thin film
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Effect of post-deposition processing on ZnO thin films and devices. / Yen, Tingfang; Haungs, Alan; Kim, Sung Jin; Cartwright, Alexander; Anderson, Wayne A.

In: Journal of Electronic Materials, Vol. 39, No. 5, 01.05.2010, p. 568-572.

Research output: Contribution to journalArticle

Yen, Tingfang ; Haungs, Alan ; Kim, Sung Jin ; Cartwright, Alexander ; Anderson, Wayne A. / Effect of post-deposition processing on ZnO thin films and devices. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 5. pp. 568-572.
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