Effect of fabrication variables on the performance of zinc oxide metal-semiconductor-metal photodetectors

Yen Tingfang, Dave Strome, Jin Kim Sung, Michael DiNezzaa, Alexander N. Cartwright, Wayne A. Anderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.

Original languageEnglish (US)
Title of host publicationZinc Oxide and Related Materials-2007
Number of pages6
StatePublished - Dec 1 2008
Externally publishedYes
Event2007 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 26 2007Nov 30 2007

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2007 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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