Abstract
The performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 232-237 |
| Number of pages | 6 |
| Volume | 1035 |
| State | Published - Dec 1 2008 |
| Externally published | Yes |
| Event | 2007 MRS Fall Meeting - Boston, MA, United States Duration: Nov 26 2007 → Nov 30 2007 |
Other
| Other | 2007 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/26/07 → 11/30/07 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Effect of fabrication variables on the performance of zinc oxide metal-semiconductor-metal photodetectors. / Tingfang, Yen; Strome, Dave; Kim, Sung Jin; DiNezzaa, Michael; Cartwright, Alexander N.; Anderson, Wayne A.
Materials Research Society Symposium Proceedings. Vol. 1035 2008. p. 232-237.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of fabrication variables on the performance of zinc oxide metal-semiconductor-metal photodetectors
AU - Tingfang, Yen
AU - Strome, Dave
AU - Kim, Sung Jin
AU - DiNezzaa, Michael
AU - Cartwright, Alexander N.
AU - Anderson, Wayne A.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - The performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.
AB - The performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.
UR - http://www.scopus.com/inward/record.url?scp=70350330863&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350330863&partnerID=8YFLogxK
M3 - Conference contribution
SN - 9781605608310
VL - 1035
SP - 232
EP - 237
BT - Materials Research Society Symposium Proceedings
ER -