Current transport mechanisms for MSM-photodetectors on ZnO:N thin films

Tingfang Yen, Alan Haungs, Sung Jin Kim, Alexander Cartwright, Wayne A. Anderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 AAV; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.

Original languageEnglish (US)
Title of host publicationZinc Oxide and Related Materials - 2009
Number of pages6
StatePublished - Jul 1 2010
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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