Current transport mechanisms for MSM-photodetectors on ZnO

N thin films

Tingfang Yen, Alan Haungs, Sung Jin Kim, Alexander Cartwright, Wayne A. Anderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 AAV; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages159-164
Number of pages6
Volume1201
StatePublished - Jul 1 2010
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/4/09

Fingerprint

MSM (semiconductors)
Photodetectors
photometers
Metals
Thin films
thin films
metals
Dark currents
Semiconductor materials
dark current
Electric space charge
Ion implantation
ion implantation
space charge
Electric potential
electric potential
pulses
Sputtering
sputtering
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Yen, T., Haungs, A., Kim, S. J., Cartwright, A., & Anderson, W. A. (2010). Current transport mechanisms for MSM-photodetectors on ZnO: N thin films. In Materials Research Society Symposium Proceedings (Vol. 1201, pp. 159-164)

Current transport mechanisms for MSM-photodetectors on ZnO : N thin films. / Yen, Tingfang; Haungs, Alan; Kim, Sung Jin; Cartwright, Alexander; Anderson, Wayne A.

Materials Research Society Symposium Proceedings. Vol. 1201 2010. p. 159-164.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yen, T, Haungs, A, Kim, SJ, Cartwright, A & Anderson, WA 2010, Current transport mechanisms for MSM-photodetectors on ZnO: N thin films. in Materials Research Society Symposium Proceedings. vol. 1201, pp. 159-164, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.
Yen T, Haungs A, Kim SJ, Cartwright A, Anderson WA. Current transport mechanisms for MSM-photodetectors on ZnO: N thin films. In Materials Research Society Symposium Proceedings. Vol. 1201. 2010. p. 159-164
Yen, Tingfang ; Haungs, Alan ; Kim, Sung Jin ; Cartwright, Alexander ; Anderson, Wayne A. / Current transport mechanisms for MSM-photodetectors on ZnO : N thin films. Materials Research Society Symposium Proceedings. Vol. 1201 2010. pp. 159-164
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