Abstract
Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. We reported a detail comparison of such motions in the thermally activated subthreshold, or "creep," regime, where the wall velocity obeys an Arrhenius law. Experiment shows the velocity scales in an evidently different way with a driving current and field, proving the nonequivalence of two drives. Scaling theory explains the important features of experiment.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 |
| Publisher | World Scientific Publishing Co. Pte Ltd |
| Pages | 134-137 |
| Number of pages | 4 |
| ISBN (Print) | 981428212X, 9789814282123 |
| State | Published - 2009 |
| Event | 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 - Hatoyama, Saitama, Japan Duration: Aug 25 2008 → Aug 28 2008 |
Other
| Other | 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 |
|---|---|
| Country | Japan |
| City | Hatoyama, Saitama |
| Period | 8/25/08 → 8/28/08 |
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Keywords
- Creep motion
- Magnetic domain wall
- Magnetic semiconductor
- Spin transfer
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Ieda, J., Maekawa, S., & Barnes, S. (2009). Current-induced domain wall creep in magnetic wires. In Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 (pp. 134-137). World Scientific Publishing Co. Pte Ltd.