Current-induced domain wall creep in magnetic wires

J. Ieda; S. Maekawa; S. E. Barnes

Current-induced domain wall creep in magnetic wires

J. Ieda, S. Maekawa, S. E. Barnes

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. We reported a detail comparison of such motions in the thermally activated subthreshold, or "creep," regime, where the wall velocity obeys an Arrhenius law. Experiment shows the velocity scales in an evidently different way with a driving current and field, proving the nonequivalence of two drives. Scaling theory explains the important features of experiment.

Original language	English (US)
Title of host publication	Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
Publisher	World Scientific Publishing Co. Pte Ltd
Pages	134-137
Number of pages	4
ISBN (Print)	981428212X, 9789814282123
State	Published - Jan 1 2009
Event	9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 - Hatoyama, Saitama, Japan Duration: Aug 25 2008 → Aug 28 2008

Publication series

Name	Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008

Other

Other	9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
Country	Japan
City	Hatoyama, Saitama
Period	8/25/08 → 8/28/08

Keywords

Creep motion
Magnetic domain wall
Magnetic semiconductor
Spin transfer

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

Fingerprint Dive into the research topics of 'Current-induced domain wall creep in magnetic wires'. Together they form a unique fingerprint.

Cite this

Ieda, J., Maekawa, S., & Barnes, S. E. (2009). Current-induced domain wall creep in magnetic wires. In Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 (pp. 134-137). (Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008). World Scientific Publishing Co. Pte Ltd.

Current-induced domain wall creep in magnetic wires. / Ieda, J.; Maekawa, S.; Barnes, S. E.

Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008. World Scientific Publishing Co. Pte Ltd, 2009. p. 134-137 (Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ieda, J, Maekawa, S & Barnes, SE 2009, Current-induced domain wall creep in magnetic wires. in Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008. Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008, World Scientific Publishing Co. Pte Ltd, pp. 134-137, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008, Hatoyama, Saitama, Japan, 8/25/08.

Ieda J, Maekawa S, Barnes SE. Current-induced domain wall creep in magnetic wires. In Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008. World Scientific Publishing Co. Pte Ltd. 2009. p. 134-137. (Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008).

Ieda, J. ; Maekawa, S. ; Barnes, S. E. / Current-induced domain wall creep in magnetic wires. Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008. World Scientific Publishing Co. Pte Ltd, 2009. pp. 134-137 (Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008).

@inproceedings{b72a9597a7a54bf1912cc5723de25fa3,

title = "Current-induced domain wall creep in magnetic wires",

abstract = "Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. We reported a detail comparison of such motions in the thermally activated subthreshold, or {"}creep,{"} regime, where the wall velocity obeys an Arrhenius law. Experiment shows the velocity scales in an evidently different way with a driving current and field, proving the nonequivalence of two drives. Scaling theory explains the important features of experiment.",

keywords = "Creep motion, Magnetic domain wall, Magnetic semiconductor, Spin transfer",

author = "J. Ieda and S. Maekawa and Barnes, {S. E.}",

year = "2009",

month = jan,

day = "1",

language = "English (US)",

isbn = "981428212X",

series = "Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008",

publisher = "World Scientific Publishing Co. Pte Ltd",

pages = "134--137",

booktitle = "Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008",

note = "9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 ; Conference date: 25-08-2008 Through 28-08-2008",

}

TY - GEN

T1 - Current-induced domain wall creep in magnetic wires

AU - Ieda, J.

AU - Maekawa, S.

AU - Barnes, S. E.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. We reported a detail comparison of such motions in the thermally activated subthreshold, or "creep," regime, where the wall velocity obeys an Arrhenius law. Experiment shows the velocity scales in an evidently different way with a driving current and field, proving the nonequivalence of two drives. Scaling theory explains the important features of experiment.

AB - Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. We reported a detail comparison of such motions in the thermally activated subthreshold, or "creep," regime, where the wall velocity obeys an Arrhenius law. Experiment shows the velocity scales in an evidently different way with a driving current and field, proving the nonequivalence of two drives. Scaling theory explains the important features of experiment.

KW - Creep motion

KW - Magnetic domain wall

KW - Magnetic semiconductor

KW - Spin transfer

UR - http://www.scopus.com/inward/record.url?scp=84903850810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903850810&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84903850810

SN - 981428212X

SN - 9789814282123

T3 - Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008

SP - 134

EP - 137

BT - Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008

PB - World Scientific Publishing Co. Pte Ltd

T2 - 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008

Y2 - 25 August 2008 through 28 August 2008

ER -