Current-induced domain wall creep in magnetic wires

J. Ieda, S. Maekawa, Stewart Barnes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. We reported a detail comparison of such motions in the thermally activated subthreshold, or "creep," regime, where the wall velocity obeys an Arrhenius law. Experiment shows the velocity scales in an evidently different way with a driving current and field, proving the nonequivalence of two drives. Scaling theory explains the important features of experiment.

Original languageEnglish (US)
Title of host publicationProceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages134-137
Number of pages4
ISBN (Print)981428212X, 9789814282123
StatePublished - 2009
Event9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 - Hatoyama, Saitama, Japan
Duration: Aug 25 2008Aug 28 2008

Other

Other9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
CountryJapan
CityHatoyama, Saitama
Period8/25/088/28/08

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Keywords

  • Creep motion
  • Magnetic domain wall
  • Magnetic semiconductor
  • Spin transfer

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ieda, J., Maekawa, S., & Barnes, S. (2009). Current-induced domain wall creep in magnetic wires. In Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 (pp. 134-137). World Scientific Publishing Co. Pte Ltd.